Optical pumping and the valence‐band light‐hole effective mass in GaxIn1−xAsyP1−y(y≃2.2x)

1981 ◽  
Vol 38 (6) ◽  
pp. 450-452 ◽  
Author(s):  
Claudine Hermann ◽  
Thomas P. Pearsall
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Optical Pumping ◽  
Light Hole ◽  
Hole Effective Mass

Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement

2021 ◽  
Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Photoemission Spectroscopy ◽  
Direct Evaluation ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Effective Masses

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...

Valence band structure and hole effective mass of uniaxial stressed Germanium

2011 ◽  
Vol 10 (4) ◽  
pp. 388-393 ◽  
Author(s):  
Jian-Li Ma ◽  
He-Ming Zhang ◽  
Xiao-Yan Wang ◽  
Qun Wei ◽  
Guan-Yu Wang ◽  
...  
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Valence Band ◽  
Hole Effective Mass ◽  
Valence Band Structure

Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

2011 ◽  
Vol 55-57 ◽  
pp. 979-982
Author(s):  
Jian Jun Song ◽  
Heng Sheng Shan ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Guan Yu Wang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Theoretical Basis ◽  
Hole Mobility ◽  
Physical Parameters ◽  
Density Of State ◽  
Strained Si ◽  
Hole Effective Mass ◽  
Effective Masses ◽  
Material Physics

Strained Si1-xGextechnology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGexmaterials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

Design and Simulation of a Mid-Infrared Quantum Cascade Laser Based on Ge-Si Superlattices

2007 ◽  
Vol 121-123 ◽  
pp. 677-680
Author(s):  
Yan Wu Lu ◽  
Gregory Sun
Keyword(s):  
Effective Mass ◽  
Quantum Cascade Laser ◽  
Current Density ◽  
Population Inversion ◽  
Optical Gain ◽  
Light Hole ◽  
Mid Infrared ◽  
Hole Effective Mass ◽  
Quantum Cascade ◽  
Simple Quantum

This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si0.5Ge0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6×6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm2.

Light Effective Mass in the Widely-Dispersed Valence Band of Single Crystalline Rubrene Observed by High-Resolution Angle-Resolved Ultraviolet Photoelectron Spectroscopy

2009 ◽  
Vol 1197 ◽  
Author(s):  
Yasuo Nakayama ◽  
Shin-ichi Machida ◽  
Steffen Duhm ◽  
Qian Xin ◽  
Akihiro Funakoshi ◽  
...  
Keyword(s):  
High Resolution ◽  
Charge Carrier ◽  
Single Crystals ◽  
Effective Mass ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Laser Illumination

AbstractHigh-resolution angle resolved ultraviolet photoelectron spectroscopy measurements were conducted on rubrene single crystals successfully through relief of the sample charging assisted by a laser illumination. Significant dispersion of the valence band was clearly resolved. The band width W and the hole effective mass mh* were estimated to be 0.4 eV and 0.7m0, respectively, along the most conductive direction. The present results strongly suggest that the transport nature in rubrene single crystals should be described in the band transport framework of a delocalized charge carrier.

Valence intersubband lasers with inverted light-hole effective mass

1998 ◽  
Vol 72 (12) ◽  
pp. 1481-1483 ◽  
Author(s):  
G. Sun ◽  
Y. Lu ◽  
J. B. Khurgin
Keyword(s):  
Effective Mass ◽  
Light Hole ◽  
Hole Effective Mass

Impact of [110]/(001) uniaxial stress on valence band structure and hole effective mass of silicon

2011 ◽  
Vol 32 (2) ◽  
pp. 022002
Author(s):  
Jianli Ma ◽  
Heming Zhang ◽  
Jianjun Song ◽  
Guanyu Wang ◽  
Xiaoyan Wang ◽  
...  
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Valence Band ◽  
Uniaxial Stress ◽  
Hole Effective Mass ◽  
Valence Band Structure

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

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