Heavy-to-light hole intersubband absorption in the valence band of GaAs/AlAs heterostructures

2013 ◽  
Vol 1509 ◽  
Author(s):  
M. I. Hossain ◽  
Z. Ikonic ◽  
J. Watson ◽  
J. Shao ◽  
P. Harrison ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Diffusion Length ◽  
Careful Analysis ◽  
Light Hole ◽  
Intersubband Transitions ◽  
Intersubband Absorption ◽  
Solid Carbon Source ◽  
P Type ◽  
Theoretical Simulations

ABSTRACTWe performed a thorough investigation of mid-infrared heavy-to-light hole intersubband absorption in the valence band of p-doped GaAs quantum wells with AlAs barriers. For the p-type doping a high-purity solid carbon source was used. The experimental results are compared with theoretical simulations. The inclusion of layer inter-diffusion well reproduces the transition energies. We estimate a 6-10 Å inter-diffusion length that is consistent with electron microscopy measurements. A careful analysis of our results provides valuable information for further design of emitters and detectors based on hole intersubband transitions in the valence band.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

2013 ◽  
Vol 113 (5) ◽  
pp. 053103 ◽  
Author(s):  
M. I. Hossain ◽  
Z. Ikonic ◽  
J. Watson ◽  
J. Shao ◽  
P. Harrison ◽  
...  
Keyword(s):  
Valence Band ◽  
Light Hole ◽  
Carbon Doped ◽  
Intersubband Absorption

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

TERAHERTZ EMISSION FROM ELECTRICALLY PUMPED SILICON GERMANIUM INTERSUBBAND DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 115-120
Author(s):  
N. Sustersic ◽  
S. Kim ◽  
P.-C. Lv ◽  
M. Coppinger ◽  
T. Troeger ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Silicon Germanium ◽  
Heavy Hole ◽  
Light Hole ◽  
Spectral Lines ◽  
Intersubband Transitions ◽  
Terahertz Emission ◽  
Drive Current ◽  
Quantum Well Width

In this paper, we report on current pumped THz emitting devices based on intersubband transitions in SiGe quantum wells. The spectral lines occurred in a range from 5 to 12 THz depending on the quantum well width, Ge concentration in the well, and device temperature. A time-averaged power of 15 nW was extracted from a 16 period SiGe/Si superlattice with quantum wells 22 Å thick, at a device temperature of 30 K and a drive current of 550 mA. A net quantum efficiency of approximately 3 × 10-4 was calculated from the power and drive current, 30 times higher than reported for comparable quantum cascades utilizing heavy-hole to heavy-hole transitions and, taking into account the number of quantum well periods, approximately four times larger than for electroluminescence reported previously from a device utilizing light-hole to heavy-hole transitions.

scholarly journals Intersubband absorption of strain-compensated Si1−xGex valence-band quantum wells with 0.7⩽x⩽0.85

2005 ◽  
Vol 98 (4) ◽  
pp. 044501 ◽  
Author(s):  
T. Fromherz ◽  
M. Meduňa ◽  
G. Bauer ◽  
A. Borak ◽  
C. V. Falub ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Intersubband Absorption

Thomas-Fermi-Dirac calculations of valence band states in two p-type delta-doped ZnSe quantum wells

2005 ◽  
Vol 242 (5) ◽  
pp. 1043-1053 ◽  
Author(s):  
I. Rodriguez-Vargas ◽  
L. M. Gaggero-Sager ◽  
J. C. Martinez-Orozco
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Thomas Fermi ◽  
P Type
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