Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators

2012 ◽  
Vol 112 (11) ◽  
pp. 114515 ◽  
Author(s):  
Aya Hino ◽  
Shinya Morita ◽  
Satoshi Yasuno ◽  
Tomoya Kishi ◽  
Kazushi Hayashi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators ◽  
And Diffusion

scholarly journals Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

2011 ◽  
Vol 99 (23) ◽  
pp. 232902 ◽  
Author(s):  
Jaesoo Ahn ◽  
Irina Geppert ◽  
Marika Gunji ◽  
Martin Holland ◽  
Iain Thayne ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators

Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

2004 ◽  
Vol 85 (22) ◽  
pp. 5412-5414 ◽  
Author(s):  
Kyung-Min Kim ◽  
Byung Joon Choi ◽  
Seong Keun Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators ◽  
Semiconductor Type

Fluorine incorporation at HfO2∕SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure

2007 ◽  
Vol 90 (11) ◽  
pp. 112911 ◽  
Author(s):  
Jeong-Hee Ha ◽  
Kang-ill Seo ◽  
Paul C. McIntyre ◽  
Krishna C. Sarawat ◽  
Kyeongjae Cho
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
High K ◽  
Local Electronic Structure

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

2010 ◽  
Vol 96 (8) ◽  
pp. 082904 ◽  
Author(s):  
Shankar Swaminathan ◽  
Michael Shandalov ◽  
Yasuhiro Oshima ◽  
Paul C. McIntyre
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

2016 ◽  
Vol 9 (10) ◽  
pp. 101002 ◽  
Author(s):  
Ryohei Asahara ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Joyo Ito ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators ◽  
Semiconductor Structures ◽  
Nitrogen Incorporation
Sign in / Sign up

Export Citation Format

Share Document