Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

2010 ◽  
Vol 96 (8) ◽  
pp. 082904 ◽  
Author(s):  
Shankar Swaminathan ◽  
Michael Shandalov ◽  
Yasuhiro Oshima ◽  
Paul C. McIntyre
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators

scholarly journals Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

2011 ◽  
Vol 99 (23) ◽  
pp. 232902 ◽  
Author(s):  
Jaesoo Ahn ◽  
Irina Geppert ◽  
Marika Gunji ◽  
Martin Holland ◽  
Iain Thayne ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Insulators

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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