Fluorine incorporation at HfO2∕SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure

2007 ◽  
Vol 90 (11) ◽  
pp. 112911 ◽  
Author(s):  
Jeong-Hee Ha ◽  
Kang-ill Seo ◽  
Paul C. McIntyre ◽  
Krishna C. Sarawat ◽  
Kyeongjae Cho
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
High K ◽  
Local Electronic Structure

Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks

2007 ◽  
Vol 102 (3) ◽  
pp. 034514 ◽  
Author(s):  
P. Batude ◽  
X. Garros ◽  
L. Clavelier ◽  
C. Le Royer ◽  
J. M. Hartmann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Sign in / Sign up

Export Citation Format

Share Document