Nitrided thermal SiO[sub 2] for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor

Shibly S. Ahmed; John P. Denton; Gerold W. Neudeck

doi:10.1116/1.1364698

Nitrided thermal SiO[sub 2] for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1364698 ◽

2001 ◽

Vol 19 (3) ◽

pp. 800 ◽

Cited By ~ 3

Author(s):

Shibly S. Ahmed ◽

John P. Denton ◽

Gerold W. Neudeck

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Insulators ◽

Effect Transistor ◽

Bottom Gate

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Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3074 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3074-3078 ◽

Cited By ~ 8

Author(s):

Yuki Tahara ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantitative Modeling ◽

Double Gate ◽

Effect Transistor

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Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8311 ◽

2008 ◽

Vol 47 (11) ◽

pp. 8311-8316 ◽

Cited By ~ 4

Author(s):

Ryo Tanabe ◽

Kunihiro Suzuki

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Threshold Voltage Model

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Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5686 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5686-5690 ◽

Cited By ~ 4

Author(s):

Gen Tsutsui ◽

Toshiro Hiramoto

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

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Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l349 ◽

1999 ◽

Vol 38 (Part 2, No. 4A) ◽

pp. L349-L352 ◽

Cited By ~ 7

Author(s):

Ganesh Samudra ◽

Krishnasamy Rajendran

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Scaling Parameter ◽

Effect Transistor ◽

Parameter Dependent

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An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6250 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6250-6253 ◽

Cited By ~ 1

Author(s):

Sheng-Lyang Jang ◽

Man-Chun Hu ◽

Shau-Shen Liu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Transistor Model ◽

Effect Transistor

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Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal–oxide–semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.369763 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3912-3915 ◽

Cited By ~ 7

Author(s):

Jong-Wook Lee ◽

Min-Rok Oh ◽

Yo-Hwan Koh

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Electrical Performance ◽

Buried Oxide ◽

Effect Transistor

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An Accurate Drain Current Model of Dual Material Double Gate Metal Oxide Semiconductor Field Effect Transistor

Silicon ◽

10.1007/s12633-021-01321-y ◽

2021 ◽

Author(s):

Himeli Chakrabarti ◽

Reshmi Maity ◽

S. Baishya ◽

N. P. Maity

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Dual Material

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A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

Chinese Physics Letters ◽

10.1088/0256-307x/20/5/350 ◽

2003 ◽

Vol 20 (5) ◽

pp. 767-769 ◽

Cited By ~ 8

Author(s):

Zhu Ming ◽

Lin Qing ◽

Zhang Zheng-Xuan ◽

Lin Cheng-Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

Effect Transistor

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Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1533108 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1230-1240 ◽

Cited By ~ 11

Author(s):

M. D. Croitoru ◽

V. N. Gladilin ◽

V. M. Fomin ◽

J. T. Devreese ◽

W. Magnus ◽

...

Keyword(s):

Metal Oxide ◽

Quantum Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers

AIP Advances ◽

10.1063/1.4983214 ◽

2017 ◽

Vol 7 (5) ◽

pp. 055308 ◽

Cited By ~ 3

Author(s):

Xiangzhan Wang ◽

Changgui Tan ◽

Xi Zou ◽

Yi Zhang ◽

Jianhua Pan ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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