Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Ting-Kuo Kang

doi:10.1063/1.2909082

Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2909082 ◽

2008 ◽

Vol 92 (15) ◽

pp. 153501 ◽

Cited By ~ 3

Author(s):

Ting-Kuo Kang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2664 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2664-2667 ◽

Cited By ~ 4

Author(s):

Ting-Kuo Kang ◽

Po-Chin Huang ◽

Yu-Huan Sa ◽

San-Lein Wu ◽

Shoou-Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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Elimination of parasitic channels in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/3/306 ◽

2001 ◽

Vol 16 (3) ◽

pp. 155-159 ◽

Cited By ~ 8

Author(s):

Nobuyuki Sugii ◽

Shinya Yamaguchi ◽

Kiyokazu Nakagawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Characterization of silicon–carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.10.099 ◽

2013 ◽

Vol 529 ◽

pp. 444-448 ◽

Cited By ~ 4

Author(s):

B.-F. Hsieh ◽

S.T. Chang ◽

M.H. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Silicon Carbon

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A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages

Solid-State Electronics ◽

10.1016/s0038-1101(02)00458-6 ◽

2003 ◽

Vol 47 (6) ◽

pp. 995-1001 ◽

Cited By ~ 6

Author(s):

K.G. Anil ◽

S. Mahapatra ◽

I. Eisele

Keyword(s):

Experimental Investigation ◽

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique

Applied Physics Letters ◽

10.1063/1.2739324 ◽

2007 ◽

Vol 90 (20) ◽

pp. 202101 ◽

Cited By ~ 8

Author(s):

K. Sawano ◽

A. Fukumoto ◽

Y. Hoshi ◽

Y. Shiraki ◽

J. Yamanaka ◽

...

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Implantation Technique ◽

Strained Si

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Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c038 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C038

Author(s):

Po-Chin Huang ◽

Ting-Kuo Kang ◽

Bo-Chin Wang ◽

San-Lein Wu ◽

Shoou-Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Sige

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New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.3763 ◽

1992 ◽

Vol 31 (Part 1, No. 12A) ◽

pp. 3763-3769 ◽

Cited By ~ 1

Author(s):

Koichi Fukuda ◽

Hermann-Josef Peifer ◽

Bernd Meinerzhagen ◽

Rainer Thoma ◽

Walter L. Engl

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Efficient Treatment

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Effects of substrate strain and electrical stress on lattice dynamics, defects, and traps in strained-Si/Si0.81Ge0.19 n-type metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4718015 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104507 ◽

Cited By ~ 2

Author(s):

C. Mukherjee ◽

S. Sengupta ◽

C. K. Maiti ◽

T. K. Maiti

Keyword(s):

Metal Oxide ◽

Lattice Dynamics ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Electrical Stress ◽

Substrate Strain

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