Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy

T. Trenkler

doi:10.1116/1.589812

Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589812 ◽

1998 ◽

Vol 16 (1) ◽

pp. 367 ◽

Cited By ~ 35

Author(s):

T. Trenkler

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Local Potential ◽

Oxide Semiconductor ◽

Force Microscopy ◽

Atomic Force

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A complementary-metal-oxide-semiconductor-field-effect-transistor-compatible atomic force microscopy tip fabrication process and integrated atomic force microscopy cantilevers fabricated with this process

Ultramicroscopy ◽

10.1016/s0304-3991(02)00077-3 ◽

2002 ◽

Vol 91 (1-4) ◽

pp. 9-20 ◽

Cited By ~ 6

Author(s):

Mizuki Ono ◽

Dirk Lange ◽

Oliver Brand ◽

Christoph Hagleitner ◽

Henry Baltes

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Microscopy ◽

Atomic Force ◽

Effect Transistor

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Integrated atomic force microscopy array probe with metal–oxide–semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal–oxide–semiconductor electronics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1327299 ◽

2000 ◽

Vol 18 (6) ◽

pp. 2669 ◽

Cited By ~ 41

Author(s):

T. Akiyama ◽

U. Staufer ◽

N. F. de Rooij ◽

D. Lange ◽

C. Hagleitner ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Microscopy ◽

Atomic Force ◽

Array Probe ◽

Semiconductor Electronics ◽

Effect Transistor ◽

On Chip

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Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2958246 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1445 ◽

Cited By ~ 8

Author(s):

L. Aguilera ◽

W. Polspoel ◽

A. Volodin ◽

C. Van Haesendonck ◽

M. Porti ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force

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Electrical characterization and fabrication of SiO2based metal oxide semiconductor nanoelectronic devices with atomic force microscopy

Nanotechnology ◽

10.1088/0957-4484/14/6/303 ◽

2003 ◽

Vol 14 (6) ◽

pp. 584-587 ◽

Cited By ~ 4

Author(s):

M Porti ◽

X Blasco ◽

M Nafr a ◽

X Aymerich

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Microscopy ◽

Nanoelectronic Devices ◽

Atomic Force

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Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

Journal of Applied Physics ◽

10.1063/1.2010626 ◽

2005 ◽

Vol 98 (5) ◽

pp. 056101 ◽

Cited By ~ 12

Author(s):

M. Porti ◽

M. Avidano ◽

M. Nafría ◽

X. Aymerich ◽

J. Carreras ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Force Microscopy ◽

Atomic Force ◽

Conduction Mechanisms ◽

Si Nanocrystals

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The relaxation of intrinsic compressive stress in complementary metal-oxide-semiconductor transistors by additional N ion implantation treatment with atomic force microscope-Raman stress extraction

Journal of Applied Physics ◽

10.1063/1.4714558 ◽

2012 ◽

Vol 111 (9) ◽

pp. 094511 ◽

Cited By ~ 10

Author(s):

M.-H. Liao ◽

C.-H. Chen ◽

L.-C. Chang ◽

C. Yang ◽

S.-C. Kao

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Atomic Force Microscope ◽

Compressive Stress ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Atomic Force

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Threshold adjustments for complementary metal‐oxide‐semiconductor optimization using B and As focused ion beams

Applied Physics Letters ◽

10.1063/1.96738 ◽

1986 ◽

Vol 48 (10) ◽

pp. 668-669 ◽

Cited By ~ 16

Author(s):

J. Y. Lee ◽

R. L. Kubena

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Ion Beams ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Focused Ion Beams

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Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Nano Research ◽

10.1007/s12274-021-3567-9 ◽

2021 ◽

Author(s):

Zhen Li ◽

Katherine R. Jinkins ◽

Dingzhou Cui ◽

Mingrui Chen ◽

Zhiyuan Zhao ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays ◽

Semiconductor Electronics

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Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

Dalton Transactions ◽

10.1039/d1dt00731a ◽

2021 ◽

Vol 50 (16) ◽

pp. 5540-5551

Author(s):

Almudena Notario-Estévez ◽

Xavier López ◽

Coen de Graaf

Keyword(s):

Metal Oxide ◽

Computational Study ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Molecular Conduction ◽

Conduction Properties ◽

Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

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A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22626 ◽

2021 ◽

Author(s):

Cheng Cao ◽

Jiangfan Liu ◽

Yubing Li ◽

Tao Tan ◽

Zemeng Huang ◽

...

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Bandwidth Expansion ◽

Semiconductor Process

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