Sub-100 nm pattern formation using a novel lithography with SiNx resist by focused ion beam exposure and dry-etching development

1993 ◽  
Vol 11 (2) ◽  
pp. 268 ◽  
Author(s):  
S. Takahashi
Keyword(s):  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching

Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

2003 ◽  
Vol 766 ◽  
Author(s):  
V.V. Makarov ◽  
W.B. Thompson ◽  
T.R. Lundquist
Keyword(s):  
Etch Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Reduced Time

AbstractDry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.

Delamination and Buckling Induced by Compressive Strain in Metal Thin Films

2005 ◽  
Vol 490-491 ◽  
pp. 655-660 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Compressive Strain ◽  
Ex Situ ◽  
Metal Thin Films ◽  
Force Microscopy ◽  
Steady Growth ◽  
Sputter Deposited

The pattern formation during delamination and buckling in sputter-deposited tungsten thin films under large compressive stresses was investigated. The films were analyzed in situ by a cantilever beam technique, and ex situ by atomic force microscopy (AFM) and focused ion beam. Depending on the magnitude of compressive strain in thin films, different types of buckling patterns were observed. For stresses above a critical value, there was a regime of steady growth in which the incipient blister evolves into a regular sinusoidal-like propagation. At higher strains, the sinusoidallike wrinkles were developed with constant widths and wavelengths. Some of the wrinkles bifurcated to form branches. With further increase in stress the complicated buckling patches were formed with many irregular lobes. These types of pattern formation have been supported by elastic energy calculations.

Unique nanopore pattern formation by focused ion beam guided anodization

2010 ◽  
Vol 21 (40) ◽  
pp. 405301 ◽  
Author(s):  
Zhi-Peng Tian ◽  
Kathy Lu ◽  
Bo Chen
Keyword(s):  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam

Nanohole pattern formation on germanium induced by focused ion beam and broad beam Ga+ irradiation

2012 ◽  
Vol 100 (22) ◽  
pp. 223108 ◽  
Author(s):  
Monika Fritzsche ◽  
Arndt Muecklich ◽  
Stefan Facsko
Keyword(s):  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Broad Beam

Deep Structures Produced in III-V Materials by Combined Focused Ion Beam Irradiation and Dry Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
L.R. Harriott ◽  
Y.L. Wang ◽  
B.H. Chin ◽  
H. Temkin
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Surface Pattern ◽  
Gas Source ◽  
Direct Patterning ◽  
Ion Energies ◽  
Micron Diameter ◽  
Vacuum Lithography

ABSTRACTWe have developed a direct patterning process for InP based materials which uses ion exposure followed by dry etching to produce surface topography. The substrate is first implanted with a 20 keV Ga+ beam focused to 0.2 micron diameter. The surface pattern is then developed in the substrate by etching with or without a low energy (25 -100 eV) flood Ar+ ion beam in a C12(5×10-4 Torr) atmosphere at 180 to 2000 C. This process has been integrated in a common vacuum chamber with a gas source molecular beam epitaxy (GSMBE) system. In-situ patterning and high quality overgrowth has been demonstrated for low Ar+ ion energies during etching. In this paper, we will describe a model for the patterning mechanism and suggest how it may be exploited to achieve a complete vacuum lithography process compatible with epitaxial regrowth.

A novel vacuum lithography with SiNx resist for focused ion beam exposure and dry etching development

1991 ◽  
Author(s):  
S. Takahashi ◽  
M. Ohashi ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
R. Ito
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Dry Etching ◽  
Vacuum Lithography
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