scholarly journals Interface structures in GaAs wafer bonding: Application to compliant substrates

2000 ◽  
Vol 76 (19) ◽  
pp. 2674-2676 ◽  
Author(s):  
R. R. Vanfleet ◽  
M. Shverdin ◽  
J. Silcox ◽  
Z. H. Zhu ◽  
Y. H. Lo
Keyword(s):  
Wafer Bonding ◽  
Gaas Wafer ◽  
Compliant Substrates ◽  
Interface Structures

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

High-temperature healing of interfacial voids in GaAs wafer bonding

2002 ◽  
Vol 91 (4) ◽  
pp. 1973-1977 ◽  
Author(s):  
YewChung Sermon Wu ◽  
Po Chun Liu ◽  
R. S. Feigelson ◽  
R. K. Route
Keyword(s):  
High Temperature ◽  
Wafer Bonding ◽  
Gaas Wafer

A Bulk RF MEMS Switch by Silicon-to-GaAs Bonding

2009 ◽  
Vol 60-61 ◽  
pp. 224-227
Author(s):  
Le Lu ◽  
Jian Zhu ◽  
Shi Xin Jian ◽  
Chen Chen
Keyword(s):  
Gallium Arsenide ◽  
Transmission Line ◽  
Wafer Bonding ◽  
Gaas Substrate ◽  
Rf Mems ◽  
Beam Structure ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Gaas Wafer ◽  
Electrode Contact

. A Bulk RF MEMS switch is present in this paper. The beam structure and transmission line are separated fabricated on silicon and gallium arsenide (GaAs) wafer. The beam structure, up electrode, contact and anchor are fabricated on the silicon wafer. And transmission line and down electrode are made on the GaAs substrate. Two parts of the switch are bonded together by wafer bonding using gold layer as seed. The total area of the switch is 600 um X 600 um.

Molecular dynamics simulations of wafer bonding

2001 ◽  
Vol 681 ◽  
Author(s):  
Kurt Scheerschmidt
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Wafer Bonding ◽  
Tight Binding ◽  
Tight Binding Approximation ◽  
Elementary Processes ◽  
Empirical Potentials ◽  
Atomic Interactions ◽  
Dynamics Simulations ◽  
Interface Structures

ABSTRACTMolecular dynamics simulations using empirical potentials have been employed to describe atomic interactions at interfaces created by the macroscopic wafer bonding process. Investigating perfect or distorted surfaces of different semiconductor materials as well as of silica enables one to study the elementary processes and the resulting defects at the interfaces, and to characterize the ability of the potentials used. Twist rotation due to misalignment and bonding over steps influence strongly the bondability of larger areas. Empirical potentials developed by the bond order tight-binding approximation include ∏-bonds and yield enhanced interface structures, energies, and transferability to new materials systems.

Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

2013 ◽  
Vol 113 (20) ◽  
pp. 203512 ◽  
Author(s):  
S. Essig ◽  
O. Moutanabbir ◽  
A. Wekkeli ◽  
H. Nahme ◽  
E. Oliva ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Wafer Bonding ◽  
Atom Beam ◽  
Gaas Wafer ◽  
Fast Atom Beam

Low-temperature InP∕GaAs wafer bonding using sulfide-treated surface

2006 ◽  
Vol 88 (6) ◽  
pp. 061104 ◽  
Author(s):  
Hui Huang ◽  
Xiaomin Ren ◽  
Xinyan Wang ◽  
Qi Wang ◽  
Yongqing Huang
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Gaas Wafer

Strength Design and Minimization of Residual Stresses in Reversible GaAs Wafer Bonding Process

2006 ◽  
Vol 306-308 ◽  
pp. 1337-1342 ◽  
Author(s):  
S.T. Choi ◽  
Jun Yeob Song ◽  
Jae Hyun Kim ◽  
S. Lee ◽  
Y.Y. Earmme
Keyword(s):  
Residual Stress ◽  
Wafer Bonding ◽  
Layer Structure ◽  
Bonding Process ◽  
Thermal Residual Stress ◽  
Simple Method ◽  
Three Point Bending ◽  
Gaas Wafer ◽  
Strength Design ◽  
Steady State Temperature

The GaAs wafer bonding process is investigated to reduce the mechanical failures of GaAs wafer based on strength design concept. Three-point bending experiment is performed to measure the fracture strength of GaAs wafer, of which cleavage takes place on (110) plane. We propose a simple method for minimizing the thermal residual stress in a three-layer structure, of which the basic idea is to use an appropriate steady-state temperature gradient to the wafer bonding process. The optimum bonding condition of GaAs/wax/sapphire structure is determined based on the proposed method. The effect of material anisotropy on the thermal residual stress is also analyzed by finite element method.

Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding

2017 ◽  
Vol 110 (14) ◽  
pp. 141110 ◽  
Author(s):  
Zihao Wang ◽  
Michael L. Fanto ◽  
Jeffrey A. Steidle ◽  
Abdelsalam A. Aboketaf ◽  
Nathan A. Rummage ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Wafer Bonding ◽  
Silicon Substrate ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Relaxed SiGe Layers with High Ge Content by Compliant Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
H. Yin ◽  
R.L. Peterson ◽  
K.D. Hobart ◽  
S.R. Shieh ◽  
T.S. Duffy ◽  
...  
Keyword(s):  
Lattice Constant ◽  
Wafer Bonding ◽  
Small Islands ◽  
Lateral Expansion ◽  
Strained Si ◽  
Compliant Substrates ◽  
Plane Lattice

AbstractRelaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si0.7Ge0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut® processes, after which the continuous Si0.7Ge0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si0.7Ge0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si0.4Ge0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger in-plane lattice constant than that of relaxed Si0.7Ge0.3. With a thiner (6 nm) Si0.7Ge0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si0.45Ge0.55 has been obtained.

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