A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well

1999 ◽  
Vol 86 (3) ◽  
pp. 1456-1459 ◽  
Author(s):  
Mei-Ying Kong ◽  
Xiao-Liang Wang ◽  
Dong Pan ◽  
Yi-Ping Zeng ◽  
J. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

2013 ◽  
Vol 113 (3) ◽  
pp. 033701 ◽  
Author(s):  
Dong-Dong Jin ◽  
Chao Jiang ◽  
Guo-Dong Li ◽  
Liu-Wan Zhang ◽  
Tao Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well

Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs

1989 ◽  
Vol 55 (14) ◽  
pp. 1427-1429 ◽  
Author(s):  
E. M. Clausen ◽  
H. G. Craighead ◽  
J. M. Worlock ◽  
J. P. Harbison ◽  
L. M. Schiavone ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Layer ◽  
Quantum Well ◽  
Layer Thickness ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Surface Layer Thickness

The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

2017 ◽  
Vol 392 ◽  
pp. 256-259 ◽  
Author(s):  
Toshiaki Tsutsumi ◽  
Giovanni Alfieri ◽  
Yoichi Kawakami ◽  
Ruggero Micheletto
Keyword(s):  
Quantum Well ◽  
Gas Pressure ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation

2001 ◽  
Vol 79 (7) ◽  
pp. 958-960 ◽  
Author(s):  
X. D. Luo ◽  
Z. Y. Xu ◽  
W. K. Ge ◽  
Z. Pan ◽  
L. H. Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Short Pulse ◽  
Pulse Excitation ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well
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