Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation

2001 ◽  
Vol 79 (7) ◽  
pp. 958-960 ◽  
Author(s):  
X. D. Luo ◽  
Z. Y. Xu ◽  
W. K. Ge ◽  
Z. Pan ◽  
L. H. Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Short Pulse ◽  
Pulse Excitation ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

Doping effects on carrier capture in a single quantum well by ensemble Monte Carlo

1996 ◽  
Vol 74 (S1) ◽  
pp. 220-224
Author(s):  
B. Reid ◽  
M. Abou-Khalil ◽  
R. Maciejko
Keyword(s):  
Monte Carlo ◽  
Quantum Well ◽  
Pulse Excitation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Capture ◽  
Ensemble Monte Carlo ◽  
Doping Effects ◽  
Long Time ◽  
Femtosecond Light Pulse

Using a bipolar ensemble Monte Carlo coupled with a Poisson equation solver, we simulate, for the first time, carrier capture with both types of carriers in an InGaAs/InP-doped single quantum well, following femtosecond light-pulse excitation. We show that Coulomb interaction between electrons and holes is very efficient in keeping the capture ambipolar for a long time. However, for short times, the capture is unipolar. Our results indicate that for these kinds of experiments, Monte Carlo simulations with only one type of carrier give questionable results.

A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well

1999 ◽  
Vol 86 (3) ◽  
pp. 1456-1459 ◽  
Author(s):  
Mei-Ying Kong ◽  
Xiao-Liang Wang ◽  
Dong Pan ◽  
Yi-Ping Zeng ◽  
J. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

2017 ◽  
Vol 392 ◽  
pp. 256-259 ◽  
Author(s):  
Toshiaki Tsutsumi ◽  
Giovanni Alfieri ◽  
Yoichi Kawakami ◽  
Ruggero Micheletto
Keyword(s):  
Quantum Well ◽  
Gas Pressure ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well
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