Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs

1989 ◽  
Vol 55 (14) ◽  
pp. 1427-1429 ◽  
Author(s):  
E. M. Clausen ◽  
H. G. Craighead ◽  
J. M. Worlock ◽  
J. P. Harbison ◽  
L. M. Schiavone ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Layer ◽  
Quantum Well ◽  
Layer Thickness ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Surface Layer Thickness

Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance

2009 ◽  
Vol 94 (24) ◽  
pp. 241906 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
H. Zhong ◽  
A. Tyagi ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Well ◽  
Polarization Field ◽  
Single Quantum ◽  
Single Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Photoluminescence determination of well depth ofGa0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum well

1985 ◽  
Vol 32 (6) ◽  
pp. 3806-3810 ◽  
Author(s):  
K. Shum ◽  
P. P. Ho ◽  
R. R. Alfano ◽  
D. F. Welch ◽  
G. W. Wicks ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Well Depth

A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well

1999 ◽  
Vol 86 (3) ◽  
pp. 1456-1459 ◽  
Author(s):  
Mei-Ying Kong ◽  
Xiao-Liang Wang ◽  
Dong Pan ◽  
Yi-Ping Zeng ◽  
J. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

Optical determination of the electron effective mass of strain compensated In0.4Ga0.6As0.995N0.005∕GaAs single quantum well

2006 ◽  
Vol 89 (17) ◽  
pp. 171112 ◽  
Author(s):  
LiFang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
J. Y. Yeh ◽  
L. J. Mawst ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Single Quantum ◽  
Electron Effective Mass ◽  
Single Quantum Well ◽  
Optical Determination

Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

2013 ◽  
Vol 113 (3) ◽  
pp. 033701 ◽  
Author(s):  
Dong-Dong Jin ◽  
Chao Jiang ◽  
Guo-Dong Li ◽  
Liu-Wan Zhang ◽  
Tao Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well
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