scholarly journals Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

2017 ◽  
Vol 25 (26) ◽  
pp. 33243 ◽  
Author(s):  
B. Damilano ◽  
S. Vézian ◽  
J. Massies
2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.


1999 ◽  
Vol 86 (3) ◽  
pp. 1456-1459 ◽  
Author(s):  
Mei-Ying Kong ◽  
Xiao-Liang Wang ◽  
Dong Pan ◽  
Yi-Ping Zeng ◽  
J. Wang ◽  
...  

2017 ◽  
Vol 392 ◽  
pp. 256-259 ◽  
Author(s):  
Toshiaki Tsutsumi ◽  
Giovanni Alfieri ◽  
Yoichi Kawakami ◽  
Ruggero Micheletto

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