Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well

2005 ◽  
Vol 112 (1-4) ◽  
pp. 146-150 ◽  
Author(s):  
K. Nomura ◽  
T. Yamada ◽  
Y. Iguchi ◽  
S. Takagishi ◽  
M. Nakayama
Keyword(s):  
Quantum Well ◽  
Localized States ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Nitrogen Alloying

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well

1999 ◽  
Vol 86 (3) ◽  
pp. 1456-1459 ◽  
Author(s):  
Mei-Ying Kong ◽  
Xiao-Liang Wang ◽  
Dong Pan ◽  
Yi-Ping Zeng ◽  
J. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

2017 ◽  
Vol 392 ◽  
pp. 256-259 ◽  
Author(s):  
Toshiaki Tsutsumi ◽  
Giovanni Alfieri ◽  
Yoichi Kawakami ◽  
Ruggero Micheletto
Keyword(s):  
Quantum Well ◽  
Gas Pressure ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation

2001 ◽  
Vol 79 (7) ◽  
pp. 958-960 ◽  
Author(s):  
X. D. Luo ◽  
Z. Y. Xu ◽  
W. K. Ge ◽  
Z. Pan ◽  
L. H. Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Short Pulse ◽  
Pulse Excitation ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser
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