Charge carrier velocity distributions in high mobility polymer field-effect transistors

2012 ◽  
Vol 100 (15) ◽  
pp. 153302 ◽  
Author(s):  
Tae-Jun Ha ◽  
Prashant Sonar ◽  
Ananth Dodabalapur
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Carrier Velocity

Charge carrier velocity distributions in field-effect transistors

2011 ◽  
Vol 98 (9) ◽  
pp. 092106 ◽  
Author(s):  
Chen-Guan Lee ◽  
Brian Cobb ◽  
Laura Ferlauto ◽  
Ananth Dodabalapur
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Velocity

scholarly journals Charge carrier velocity in graphene field-effect transistors

2017 ◽  
Vol 111 (23) ◽  
pp. 233505 ◽  
Author(s):  
Marlene Bonmann ◽  
Andrei Vorobiev ◽  
Michael A. Andersson ◽  
Jan Stake
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Velocity

High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

2016 ◽  
Vol 109 (26) ◽  
pp. 262102 ◽  
Author(s):  
Juyeon Shin ◽  
Young Mo Kim ◽  
Youjung Kim ◽  
Chulkwon Park ◽  
Kookrin Char
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Mgo Substrate

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

scholarly journals Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

2012 ◽  
Vol 171-172 ◽  
pp. 1172-1179 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Nynke Vlietstra ◽  
Edsger C.P. Smits ◽  
Mark-Jan Spijkman ◽  
Henrique L. Gomes ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Trapping ◽  
Charge Carrier Trapping

High-Mobility Field Effect Transistors Based on Supramolecular Charge Transfer Nanofibres

2012 ◽  
Vol 25 (4) ◽  
pp. 559-564 ◽  
Author(s):  
Abhay A. Sagade ◽  
K. Venkata Rao ◽  
Umesha Mogera ◽  
Subi J. George ◽  
Ayan Datta ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

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