Charge carrier velocity distributions in field-effect transistors

2011 ◽  
Vol 98 (9) ◽  
pp. 092106 ◽  
Author(s):  
Chen-Guan Lee ◽  
Brian Cobb ◽  
Laura Ferlauto ◽  
Ananth Dodabalapur
2017 ◽  
Vol 111 (23) ◽  
pp. 233505 ◽  
Author(s):  
Marlene Bonmann ◽  
Andrei Vorobiev ◽  
Michael A. Andersson ◽  
Jan Stake

2012 ◽  
Vol 100 (15) ◽  
pp. 153302 ◽  
Author(s):  
Tae-Jun Ha ◽  
Prashant Sonar ◽  
Ananth Dodabalapur

2012 ◽  
Vol 171-172 ◽  
pp. 1172-1179 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Nynke Vlietstra ◽  
Edsger C.P. Smits ◽  
Mark-Jan Spijkman ◽  
Henrique L. Gomes ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Bishwajeet Singh Bhardwaj ◽  
Takeshi Sugiyama ◽  
Naoko Namba ◽  
Takayuki Umakoshi ◽  
Takafumi Uemura ◽  
...  

Abstract Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. However, the charge carrier mobility is strongly dependent on the molecular orientation of pentacene in the active layer of the device, which is hard to investigate using standard techniques in a real device. Raman scattering, on the other hand, is a high-resolution technique that is sensitive to the molecular orientation. In this work, we investigated the orientation distribution of pentacene molecules in actual transistor devices by polarization-dependent Raman spectroscopy and correlated these results with the performance of the device. This study can be utilized to understand the distribution of molecular orientation of pentacene in various electronic devices and thus would help in further improving their performances.


2015 ◽  
Vol 51 (38) ◽  
pp. 8120-8122 ◽  
Author(s):  
Kwang Hun Park ◽  
Kwang Hee Cheon ◽  
Yun-Ji Lee ◽  
Dae Sung Chung ◽  
Soon-Ki Kwon ◽  
...  

The selenophene-substitution can lead to a higher crystalline order as well as a high charge carrier mobility in isoindigo-based polymers.


2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.


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