Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Han Zhao; Yen-Ting Chen; Jung Hwan Yum; Yanzhen Wang; Fei Zhou; Fei Xue; Jack C. Lee

doi:10.1063/1.3350893

Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Cited By ~ 61

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Barrier Layers

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High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2High-kDielectric and Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c055 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C055 ◽

Cited By ~ 3

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Chang Yong Kang ◽

Raj Jammy ◽

Raymond Joe ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2990645 ◽

2008 ◽

Vol 93 (13) ◽

pp. 132902 ◽

Cited By ~ 9

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Feng Zhu ◽

M. Zhang ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Cited By ~ 21

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

And Control

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Impact of Indium and Boron Interaction on Device Performance for Short and Narrow Channel n-Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1488918 ◽

2002 ◽

Vol 149 (8) ◽

pp. G485

Author(s):

S. Y. Ong ◽

E. F. Chor ◽

James Lee ◽

Alex See ◽

Lap Chan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Narrow Channel ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance

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Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

Applied Physics Letters ◽

10.1063/1.3604417 ◽

2011 ◽

Vol 99 (2) ◽

pp. 022106 ◽

Cited By ~ 7

Author(s):

Y.-T. Chen ◽

H.-S. Lan ◽

W. Hsu ◽

Y.-C. Fu ◽

J.-Y. Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Response

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Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3244578 ◽

2010 ◽

Vol 28 (1) ◽

pp. C1I12-C1I16 ◽

Cited By ~ 3

Author(s):

Ralf Illgen ◽

Stefan Flachowsky ◽

Tom Herrmann ◽

Wilfried Klix ◽

Roland Stenzel ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance

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Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.4225 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4225-4229

Author(s):

Jinho Ahn ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Gate Oxides ◽

Chemical Vapor Deposited

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Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.084301 ◽

2011 ◽

Vol 4 (8) ◽

pp. 084301 ◽

Cited By ~ 4

Author(s):

Yōsuke Maegawa ◽

Shunsuke Koba ◽

Hideaki Tsuchiya ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Parasitic Resistance

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High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Applied Physics Letters ◽

10.1063/1.4766917 ◽

2012 ◽

Vol 101 (20) ◽

pp. 202105 ◽

Cited By ~ 11

Author(s):

Yuichiro Suzuki ◽

Shimpei Ogiwara ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Liquid Phase Epitaxy ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1819976 ◽

2005 ◽

Vol 97 (1) ◽

pp. 011101 ◽

Cited By ~ 713

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald ◽

Mayank T. Bulsara ◽

Matthew T. Currie ◽

Anthony Lochtefeld

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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