Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

2012 ◽  
Vol 33 (6) ◽  
pp. 899-901 ◽  
Author(s):  
Tae-Jun Ha ◽  
Prashant Sonar ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Dual Gate ◽  
Carrier Velocity

scholarly journals Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

2018 ◽  
Vol 8 (8) ◽  
pp. 1341 ◽  
Author(s):  
Rei Shiwaku ◽  
Masataka Tamura ◽  
Hiroyuki Matsui ◽  
Yasunori Takeda ◽  
Tomohide Murase ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Charge Carrier Density ◽  
Organic Thin Film ◽  
Carrier Distribution ◽  
Dual Gate

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.

Influence of the Structural Properties of Microcrystalline Silicon on the Performance of High Mobility Thin-Film Transistors

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kah Yoong Chan ◽  
Dietmar Knipp ◽  
Reinhard Carius ◽  
Helmut Stiebig
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Volume Fraction ◽  
High Mobility ◽  
Charge Carrier Mobility ◽  
Electron Charge ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon

ABSTRACTThe influence of the crystalline volume fraction of hydrogenated microcrystalline silicon (mc-Si:H) on the performance of thin-film transistors (TFTs) processed at temperatures below 180 °C was investigated. TFTs employing mc-Si:H channel material prepared near the transition to amorphous growth exhibit the highest electron charge carrier mobilities exceeding 50 cm2/Vs. The influence of the crystalline volume fraction of the intrinsic mc-Si:H material on the transistor parameters like the charge carrier mobility and the contact resistance will be discussed.

Cross-Linking of Poly(arylenebutadiynylene)s and Its Effect on Charge Carrier Mobilities in Thin-Film Transistors

2021 ◽  
Author(s):  
Sultan Otep ◽  
Kosuke Ogita ◽  
Naomasa Yomogita ◽  
Kazunori Motai ◽  
Yang Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
Cross Linking

scholarly journals 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2021 ◽  
Vol 52 (S1) ◽  
pp. 7-7
Author(s):  
Weihua Wu ◽  
Yi Zhuo ◽  
Fangmei Liu ◽  
Yuanpeng Chen ◽  
Jiangbo Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Short Channel

High Mobility ZnO thin film transistors using the novel deposition of high-k dielectrics

2011 ◽  
Vol 1315 ◽  
Author(s):  
D. K. Ngwashi ◽  
R. B. M. Cross ◽  
S. Paul ◽  
Andrian P. Milanov ◽  
Anjana Devi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Metrics ◽  
Chemical Vapour ◽  
High Mobility ◽  
Hafnium Dioxide ◽  
Organic Chemical ◽  
Channel Mobility ◽  
High K ◽  
Metal Organic

ABSTRACTIn order to investigate the performance of ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous hafnium dioxide (HfO2) high-k dielectrics. Sputtered ZnO was used as the active channel layer, and aluminium source/drain electrodes were deposited by thermal evaporation, and the HfO2 high-k dielectrics are deposited by metal-organic chemical vapour deposition (MOCVD). The ZnO-TFTs with high-k HfO2 gate insulators exhibit good performance metrics and effective channel mobility which is appreciably higher in comparison to SiO2-based ZnO TFTs fabricated under similar conditions. The average channel mobility, turn-on voltage, on-off current ratio and subthreshold swing of the high-k TFTs are 31.2 cm2V-1s-1, -4.7 V, ~103, and 2.4 V/dec respectively. We compared the characteristics of a typical device consisting of HfO2 to those of a device consisting of thermally grown SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.

scholarly journals High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

2006 ◽  
Vol 89 (11) ◽  
pp. 112108 ◽  
Author(s):  
Shuhei Tatemichi ◽  
Musubu Ichikawa ◽  
Toshiki Koyama ◽  
Yoshio Taniguchi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Perylene Diimide ◽  
Thermal Treatments

Solvent vapor assisted spin-coating: A simple method to directly achieve high mobility from P3HT based thin film transistors

2013 ◽  
Vol 184 ◽  
pp. 1-4 ◽  
Author(s):  
Hao Chang ◽  
Pengyue Wang ◽  
Haidong Li ◽  
Jidong Zhang ◽  
Donghang Yan
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Simple Method ◽  
Solvent Vapor

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno
Sign in / Sign up

Export Citation Format

Share Document