scholarly journals Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

2012 ◽  
Vol 171-172 ◽  
pp. 1172-1179 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Nynke Vlietstra ◽  
Edsger C.P. Smits ◽  
Mark-Jan Spijkman ◽  
Henrique L. Gomes ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Trapping ◽  
Charge Carrier Trapping

scholarly journals Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors

Nano Letters ◽  
2015 ◽  
Vol 15 (7) ◽  
pp. 4657-4663 ◽  
Author(s):  
Yingjie Zhang ◽  
Qian Chen ◽  
A. Paul Alivisatos ◽  
Miquel Salmeron
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Trapping ◽  
Dynamic Charge ◽  
Charge Carrier Trapping

scholarly journals The Quinonoid Zwitterion Interlayer for the Improvement of Charge Carrier Mobility in Organic Field-Effect Transistors

Polymers ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1567
Author(s):  
Adam Luczak ◽  
Angélina Ruiz ◽  
Simon Pascal ◽  
Adrian Adamski ◽  
Jarosław Jung ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Charge Carriers ◽  
Organic Field Effect Transistors ◽  
Order Of Magnitude ◽  
Charge Carrier Trapping ◽  
Trapping Sites

The interface between the semiconductor and the dielectric layer plays a crucial role in organic field-effect transistors (OFETs) because it is at the interface that charge carriers are accumulated and transported. In this study, four zwitterionic benzoquinonemonoimine dyes featuring alkyl and aryl N-substituents were used to cover the dielectric layers in OFET structures. The best interlayer material, containing aliphatic side groups, increased charge carrier mobility in the measured systems. This improvement can be explained by the reduction in the number of the charge carrier trapping sites at the dielectric active layer interface from 1014 eV−1 cm−2 to 2 × 1013 eV−1 cm−2. The density of the traps was one order of magnitude lower compared to the unmodified transistors. This resulted in an increase in charge carrier mobility in the tested poly [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT)-based transistors to 5.4 × 10−1 cm2 V−1 s−1.

Intrinsic point defects and charge carrier trapping in monolayer BiOX (X = I, Br, and Cl)

2021 ◽  
Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
Carrier Trapping ◽  
Intrinsic Point Defects ◽  
Charge Carrier Trapping

Manganese as a fast charge carrier trapping center in InP

2006 ◽  
Vol 382 (1-2) ◽  
pp. 220-228 ◽  
Author(s):  
K.P. Korona ◽  
A. Wysmolek ◽  
M. Kamińska ◽  
A. Twardowski ◽  
M. Piersa ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Trapping Center ◽  
Fast Charge ◽  
Carrier Trapping ◽  
Charge Carrier Trapping

scholarly journals Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Bishwajeet Singh Bhardwaj ◽  
Takeshi Sugiyama ◽  
Naoko Namba ◽  
Takayuki Umakoshi ◽  
Takafumi Uemura ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Charge Carrier ◽  
Molecular Orientation ◽  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Charge Carrier Mobility ◽  
Orientation Distribution ◽  
High Resolution Technique

Abstract Pentacene, an organic molecule, is a promising material for high-performance field effect transistors due to its high charge carrier mobility in comparison to usual semiconductors. However, the charge carrier mobility is strongly dependent on the molecular orientation of pentacene in the active layer of the device, which is hard to investigate using standard techniques in a real device. Raman scattering, on the other hand, is a high-resolution technique that is sensitive to the molecular orientation. In this work, we investigated the orientation distribution of pentacene molecules in actual transistor devices by polarization-dependent Raman spectroscopy and correlated these results with the performance of the device. This study can be utilized to understand the distribution of molecular orientation of pentacene in various electronic devices and thus would help in further improving their performances.

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