Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Yi Shi; Kenichi Saito; Hiroki Ishikuro; Toshiro Hiramoto

doi:10.1063/1.368346

Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Journal of Applied Physics ◽

10.1063/1.368346 ◽

1998 ◽

Vol 84 (4) ◽

pp. 2358-2360 ◽

Cited By ~ 261

Author(s):

Yi Shi ◽

Kenichi Saito ◽

Hiroki Ishikuro ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Storage Characteristics ◽

Memory Structures

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Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge[sub 1−x]Si[sub x]∕Si heteronanocrystals

Applied Physics Letters ◽

10.1063/1.2828693 ◽

2008 ◽

Vol 92 (1) ◽

pp. 013105 ◽

Cited By ~ 9

Author(s):

Jin Lu ◽

Zheng Zuo ◽

Yubin Chen ◽

Yi Shi ◽

Lin Pu ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Memory Structure ◽

Charge Storage ◽

Semiconductor Memory ◽

Storage Characteristics

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Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

Journal of Applied Physics ◽

10.1063/1.2010626 ◽

2005 ◽

Vol 98 (5) ◽

pp. 056101 ◽

Cited By ~ 12

Author(s):

M. Porti ◽

M. Avidano ◽

M. Nafría ◽

X. Aymerich ◽

J. Carreras ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Force Microscopy ◽

Atomic Force ◽

Conduction Mechanisms ◽

Si Nanocrystals

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Effect of Annealing Time on Structure, Composition and Electrical Characteristics of Self-Assembled Pt Nanocrystals in Metal-Oxide-Semiconductor Memory Structures

ECS Journal of Solid State Science and Technology ◽

10.1149/2.012203jss ◽

2012 ◽

Vol 1 (3) ◽

pp. Q47-Q51

Author(s):

Jiun-Yi Tseng ◽

Yuan-Tsung Chen ◽

Chia-Hao Hsu ◽

Tai-Bor Wu ◽

Maw-Kuen Wu

Keyword(s):

Metal Oxide ◽

Annealing Time ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Memory ◽

Pt Nanocrystals ◽

Self Assembled ◽

Memory Structures

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Parasitic memory effect induced by high erasing pulses in metal-oxide-semiconductor field-effect transistor device containing silicon nanocrystals

Journal of Applied Physics ◽

10.1063/1.3137190 ◽

2009 ◽

Vol 105 (11) ◽

pp. 114501 ◽

Cited By ~ 1

Author(s):

R. Ang ◽

T. P. Chen ◽

M. D. Yi ◽

H. L. Dao ◽

J. I. Wong

Keyword(s):

Metal Oxide ◽

Memory Effect ◽

Field Effect ◽

Silicon Nanocrystals ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

Applied Physics Letters ◽

10.1063/1.118236 ◽

1997 ◽

Vol 70 (7) ◽

pp. 850-852 ◽

Cited By ~ 112

Author(s):

Lingjie Guo ◽

Effendi Leobandung ◽

Stephen Y. Chou

Keyword(s):

Metal Oxide ◽

Room Temperature ◽

Metal Oxide Semiconductor ◽

Floating Gate ◽

Single Electron ◽

Oxide Semiconductor ◽

Semiconductor Memory

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Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals

Microelectronics Reliability ◽

10.1016/j.microrel.2017.09.010 ◽

2017 ◽

Vol 78 ◽

pp. 227-232 ◽

Cited By ~ 3

Author(s):

S. Chatbouri ◽

M. Troudi ◽

A. Kalboussi ◽

A. Souifi

Keyword(s):

Metal Oxide ◽

Charge Transport ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Transport Mechanisms ◽

Semiconductor Structures ◽

Traps Effect

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Cited By ~ 14

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

Self Assembled

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Total dose effect on soft error rate for dynamic metal‐oxide‐semiconductor memory cells

Journal of Applied Physics ◽

10.1063/1.342596 ◽

1989 ◽

Vol 65 (9) ◽

pp. 3694-3697 ◽

Cited By ~ 2

Author(s):

Reuben Benumof

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Error Rate ◽

Metal Oxide Semiconductor ◽

Soft Error ◽

Oxide Semiconductor ◽

Dose Effect ◽

Memory Cells ◽

Semiconductor Memory ◽

Soft Error Rate

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Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters

Sensor Letters ◽

10.1166/sl.2012.2575 ◽

2012 ◽

Vol 10 (3) ◽

pp. 833-837 ◽

Cited By ~ 8

Author(s):

N. Nedev ◽

E. Manolov ◽

D. Nesheva ◽

K. Krezhov ◽

R. Nedev ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Preprogrammed Non-Volatile Metal-Oxide-Semiconductor Memory by Use of Ionizing Radiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1971.4326425 ◽

1971 ◽

Vol 18 (6) ◽

pp. 138-140 ◽

Cited By ~ 1

Author(s):

R. R. Ferber

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Memory

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