Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge[sub 1−x]Si[sub x]∕Si heteronanocrystals

Jin Lu; Zheng Zuo; Yubin Chen; Yi Shi; Lin Pu; Youdou Zheng

doi:10.1063/1.2828693

Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge[sub 1−x]Si[sub x]∕Si heteronanocrystals

Applied Physics Letters ◽

10.1063/1.2828693 ◽

2008 ◽

Vol 92 (1) ◽

pp. 013105 ◽

Cited By ~ 9

Author(s):

Jin Lu ◽

Zheng Zuo ◽

Yubin Chen ◽

Yi Shi ◽

Lin Pu ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Memory Structure ◽

Charge Storage ◽

Semiconductor Memory ◽

Storage Characteristics

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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Journal of Applied Physics ◽

10.1063/1.368346 ◽

1998 ◽

Vol 84 (4) ◽

pp. 2358-2360 ◽

Cited By ~ 261

Author(s):

Yi Shi ◽

Kenichi Saito ◽

Hiroki Ishikuro ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Storage Characteristics ◽

Memory Structures

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Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

Journal of Applied Physics ◽

10.1063/1.2010626 ◽

2005 ◽

Vol 98 (5) ◽

pp. 056101 ◽

Cited By ~ 12

Author(s):

M. Porti ◽

M. Avidano ◽

M. Nafría ◽

X. Aymerich ◽

J. Carreras ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Force Microscopy ◽

Atomic Force ◽

Conduction Mechanisms ◽

Si Nanocrystals

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A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

Applied Physics Letters ◽

10.1063/1.118236 ◽

1997 ◽

Vol 70 (7) ◽

pp. 850-852 ◽

Cited By ~ 112

Author(s):

Lingjie Guo ◽

Effendi Leobandung ◽

Stephen Y. Chou

Keyword(s):

Metal Oxide ◽

Room Temperature ◽

Metal Oxide Semiconductor ◽

Floating Gate ◽

Single Electron ◽

Oxide Semiconductor ◽

Semiconductor Memory

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Cited By ~ 14

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

Self Assembled

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Total dose effect on soft error rate for dynamic metal‐oxide‐semiconductor memory cells

Journal of Applied Physics ◽

10.1063/1.342596 ◽

1989 ◽

Vol 65 (9) ◽

pp. 3694-3697 ◽

Cited By ~ 2

Author(s):

Reuben Benumof

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Error Rate ◽

Metal Oxide Semiconductor ◽

Soft Error ◽

Oxide Semiconductor ◽

Dose Effect ◽

Memory Cells ◽

Semiconductor Memory ◽

Soft Error Rate

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Preprogrammed Non-Volatile Metal-Oxide-Semiconductor Memory by Use of Ionizing Radiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1971.4326425 ◽

1971 ◽

Vol 18 (6) ◽

pp. 138-140 ◽

Cited By ~ 1

Author(s):

R. R. Ferber

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Memory

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GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

10.1063/1.4917676 ◽

2015 ◽

Cited By ~ 1

Author(s):

Sk Masiul Islam ◽

Sisir Chowdhury ◽

Krishnendu Sarkar ◽

B. Nagabhushan ◽

P. Banerji ◽

...

Keyword(s):

Quantum Dots ◽

Metal Oxide ◽

Flash Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Memory Devices ◽

Inas Quantum Dots

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4046. Proximity effect in beam addresed metal-oxide semiconductor memory. (USA)

Vacuum ◽

10.1016/s0042-207x(79)80698-3 ◽

1979 ◽

Vol 29 (6-7) ◽

pp. 256

Keyword(s):

Metal Oxide ◽

Proximity Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Memory

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Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal–oxide–semiconductor memory devices

Journal of Applied Physics ◽

10.1063/1.3555087 ◽

2011 ◽

Vol 109 (6) ◽

pp. 064504 ◽

Cited By ~ 19

Author(s):

G. Chakraborty ◽

A. Sengupta ◽

F. G. Requejo ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Relative Performance ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

Silicon And Germanium ◽

Germanium Nanoparticles

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Effect of Annealing Time on Structure, Composition and Electrical Characteristics of Self-Assembled Pt Nanocrystals in Metal-Oxide-Semiconductor Memory Structures

ECS Journal of Solid State Science and Technology ◽

10.1149/2.012203jss ◽

2012 ◽

Vol 1 (3) ◽

pp. Q47-Q51

Author(s):

Jiun-Yi Tseng ◽

Yuan-Tsung Chen ◽

Chia-Hao Hsu ◽

Tai-Bor Wu ◽

Maw-Kuen Wu

Keyword(s):

Metal Oxide ◽

Annealing Time ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Memory ◽

Pt Nanocrystals ◽

Self Assembled ◽

Memory Structures

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