Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals

2017 ◽  
Vol 78 ◽  
pp. 227-232 ◽  
Author(s):  
S. Chatbouri ◽  
M. Troudi ◽  
A. Kalboussi ◽  
A. Souifi
Keyword(s):  
Metal Oxide ◽  
Charge Transport ◽  
Silicon Nanocrystals ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Transport Mechanisms ◽  
Semiconductor Structures ◽  
Traps Effect

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures

2009 ◽  
Vol 2 ◽  
pp. 021201 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Yuki Oshiro ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Direct Oxidation ◽  
Semiconductor Structures

Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters

2012 ◽  
Vol 10 (3) ◽  
pp. 833-837 ◽  
Author(s):  
N. Nedev ◽  
E. Manolov ◽  
D. Nesheva ◽  
K. Krezhov ◽  
R. Nedev ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Nanocrystals ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

scholarly journals Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Open Physics ◽  
2015 ◽  
Vol 13 (1) ◽  
Author(s):  
Diana Nesheva ◽  
Nikola Nedev ◽  
Mario Curiel ◽  
Valeri Dzhurkov ◽  
Abraham Arias ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Nanocrystals ◽  
Radiation Dosimetry ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Annealing Conditions ◽  
Silicon Structures

AbstractThis article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

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