Effect of Annealing Time on Structure, Composition and Electrical Characteristics of Self-Assembled Pt Nanocrystals in Metal-Oxide-Semiconductor Memory Structures

Jiun-Yi Tseng; Yuan-Tsung Chen; Chia-Hao Hsu; Tai-Bor Wu; Maw-Kuen Wu

doi:10.1149/2.012203jss

Effect of Annealing Time on Structure, Composition and Electrical Characteristics of Self-Assembled Pt Nanocrystals in Metal-Oxide-Semiconductor Memory Structures

ECS Journal of Solid State Science and Technology ◽

10.1149/2.012203jss ◽

2012 ◽

Vol 1 (3) ◽

pp. Q47-Q51

Author(s):

Jiun-Yi Tseng ◽

Yuan-Tsung Chen ◽

Chia-Hao Hsu ◽

Tai-Bor Wu ◽

Maw-Kuen Wu

Keyword(s):

Metal Oxide ◽

Annealing Time ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Memory ◽

Pt Nanocrystals ◽

Self Assembled ◽

Memory Structures

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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Journal of Applied Physics ◽

10.1063/1.368346 ◽

1998 ◽

Vol 84 (4) ◽

pp. 2358-2360 ◽

Cited By ~ 261

Author(s):

Yi Shi ◽

Kenichi Saito ◽

Hiroki Ishikuro ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Storage ◽

Semiconductor Memory ◽

Storage Characteristics ◽

Memory Structures

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Cited By ~ 14

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

Self Assembled

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Cited By ~ 20

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Flow Ratio ◽

Nitrogen Gas ◽

Gas Flow Ratio

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Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Cited By ~ 26

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4745203 ◽

2012 ◽

Vol 101 (6) ◽

pp. 063505 ◽

Cited By ~ 2

Author(s):

Yanzhen Wang ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

Jack C. Lee

Keyword(s):

Metal Oxide ◽

Plasma Treatment ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Effect Transistor

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Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4751 ◽

1998 ◽

Vol 37 (Part 1, No. 9A) ◽

pp. 4751-4757 ◽

Cited By ~ 3

Author(s):

Kazuya Nakayama ◽

Hideo Matsuda

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Effect ◽

Electrical Characteristics

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Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Solid-State Electronics ◽

10.1016/s0038-1101(02)00068-0 ◽

2002 ◽

Vol 46 (9) ◽

pp. 1375-1380 ◽

Cited By ~ 7

Author(s):

S.-M Koo ◽

S.-K Lee ◽

C.-M Zetterling ◽

M Östling

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Plasma Etch

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