Schrödinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors

2008 ◽  
Vol 104 (11) ◽  
pp. 114515 ◽  
Author(s):  
Keng-Ming Liu ◽  
Wanqiang Chen ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Schrodinger Equation ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Metal Oxide Semiconductor ◽  
Three Dimensions ◽  
Oxide Semiconductor

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (4) ◽  
pp. 044504 ◽  
Author(s):  
Karim Huet ◽  
Damien Querlioz ◽  
Wipa Chaisantikulwat ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monte Carlo Study ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nanometer Scale

Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis

2007 ◽  
Vol 101 (11) ◽  
pp. 114511 ◽  
Author(s):  
J. Łusakowski ◽  
M. J. Martín Martínez ◽  
R. Rengel ◽  
T. González ◽  
R. Tauk ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monte Carlo Analysis ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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