scholarly journals Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution

1996 ◽  
Vol 80 (9) ◽  
pp. 4971-4975 ◽  
Author(s):  
U. Kroll ◽  
J. Meier ◽  
A. Shah ◽  
S. Mikhailov ◽  
J. Weber
1993 ◽  
Vol 334 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Seok-Woon Lee ◽  
Seung-Ki Joo

AbstractMicrocrystalline silicon films were formed at room temperature without hydrogen dilution by ECR PECVD. Microwave power more than 400 W was necessary to get crystalline films and the crystallinity increased with the power thereafter. Addition of hydrogen and argon enhanced the crystalline phase formation and the deposition rate, the reason of which was found that hydrogen etched silicon films and argon addition drastically increased the etch rate. Annealing of the films showed that microcrystalline silicon films formed by ECR PECVD have a small fraction of amorphous phase. TFT's using silicon nitride and doped/undoped microcrystalline silicon films were fabricatedd with whole processes at room temperature.


2008 ◽  
Vol 516 (5) ◽  
pp. 568-571 ◽  
Author(s):  
Chisato Niikura ◽  
Romain Brenot ◽  
Joelle Guillet ◽  
Jean-Eric Bourée

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui

1992 ◽  
Vol 42-44 ◽  
pp. 1398-1402 ◽  
Author(s):  
W. Zimmermann-Edling ◽  
R. Wiesendanger ◽  
F. Finger ◽  
K. Prasad ◽  
A. Shah

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