Role of hydrogen dilution and diborane doping on the growth mechanism ofp‐type microcrystalline silicon films prepared by photochemical vapor deposition

1992 ◽  
Vol 71 (10) ◽  
pp. 5205-5211 ◽  
Author(s):  
Sukriti Ghosh ◽  
Abhijit De ◽  
Swati Ray ◽  
A. K. Barua
Keyword(s):  
Growth Mechanism ◽  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution ◽  
Photochemical Vapor Deposition

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2with High Haze Factors

2002 ◽  
Vol 41 (Part 1, No. 11A) ◽  
pp. 6417-6420 ◽  
Author(s):  
Ying Zhao ◽  
Shinsuke Miyajima ◽  
Yoshinori Ide ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

High Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source

1999 ◽  
Vol 557 ◽  
Author(s):  
Seung Yeop Myong ◽  
Hyung Kew Lee ◽  
Euisik Yoon ◽  
Koeng Su Lim
Keyword(s):  
Silicon Carbide ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Cvd Method ◽  
Hydrogen Dilution ◽  
Boron Doped

AbstractHydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (~10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

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