scholarly journals Memristors: Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors (Adv. Funct. Mater. 43/2014)

2014 ◽  
Vol 24 (43) ◽  
pp. 6733-6733
Author(s):  
Hussein Nili ◽  
Sumeet Walia ◽  
Sivacarendran Balendhran ◽  
Dmitri B. Strukov ◽  
Madhu Bhaskaran ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide

scholarly journals RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES

2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Complex Oxide ◽  
Perovskite Oxide ◽  
Ferroelectric Polarization ◽  
Oxide Heterostructures ◽  
Polarization Voltage ◽  
Data Memory ◽  
Current Voltage

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.

Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

2014 ◽  
Vol 24 (43) ◽  
pp. 6741-6750 ◽  
Author(s):  
Hussein Nili ◽  
Sumeet Walia ◽  
Sivacarendran Balendhran ◽  
Dmitri B. Strukov ◽  
Madhu Bhaskaran ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide

scholarly journals Spatially extended nature of resistive switching in perovskite oxide thin films

2006 ◽  
Vol 89 (6) ◽  
pp. 063507 ◽  
Author(s):  
Xin Chen ◽  
NaiJuan Wu ◽  
John Strozier ◽  
Alex Ignatiev
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Perovskite Oxide ◽  
Oxide Thin Films ◽  
Spatially Extended ◽  
Perovskite Oxide Thin Films

Investigation of Resistive Switching at SrRuO3/Cr-doped SrZrO3/Metal Junctions

2007 ◽  
Vol 997 ◽  
Author(s):  
Hwan-Soo Lee
Keyword(s):  
Oxide Film ◽  
Charge Transport ◽  
Resistive Switching ◽  
Electrical Contact ◽  
Oxygen Affinity ◽  
Charge Carriers ◽  
Perovskite Oxide ◽  
Measured Resistance ◽  
Electrode Metal ◽  
Limited Conduction

AbstractWe have investigated charge transport properties with current perpendicular to the plane across the interface between a Cr-doped SrZrO3 perovskite oxide film and different top electrode metals. The measured resistance showed a wide variation depending on the top electrode metal, and suggested the interfacial properties with respect to contacting electrode metal kinds are responsible for the change in I-V characteristics (IVCs). The observed I-V curves were modeled with the equation I(V) = aV+bV2, where the variation of a was related to the work function of the metal whereas the variation of b was related to the oxygen affinity of the metal, consistent with space charge limited conduction through a defected interface. Additionally, the resistive switching was attributed to a change in both the a and the b coefficients. We speculate that voltage (or current) induced vacancy motion can account for a change in trap density in the oxide near the metallic electrical contact, and thus trapping or detrapping of charge carriers, showing the conductivity modulation across the junction.

Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

2014 ◽  
Vol 50 (7) ◽  
pp. 1-4 ◽  
Author(s):  
Zhi Luo ◽  
Hon Kit Lau ◽  
Paddy Kwok Leung Chan ◽  
Chi Wah Leung
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

2011 ◽  
Vol 110 (5) ◽  
pp. 053707 ◽  
Author(s):  
T. Yamamoto ◽  
R. Yasuhara ◽  
I. Ohkubo ◽  
H. Kumigashira ◽  
M. Oshima
Keyword(s):  
Resistive Switching ◽  
Perovskite Oxide ◽  
Oxide Interfaces ◽  
Transition Layers

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

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