scholarly journals Field-induced resistive switching in metal-oxide interfaces

2004 ◽  
Vol 85 (2) ◽  
pp. 317-319 ◽  
Author(s):  
S. Tsui ◽  
A. Baikalov ◽  
J. Cmaidalka ◽  
Y. Y. Sun ◽  
Y. Q. Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Oxide Interfaces

Size Dependence of Resistive Switching at Nanoscale Metal-Oxide Interfaces

2014 ◽  
Vol 24 (26) ◽  
pp. 4113-4118 ◽  
Author(s):  
Jiechang Hou ◽  
Stephen S. Nonnenmann ◽  
Wei Qin ◽  
Dawn A. Bonnell
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Size Dependence ◽  
Oxide Interfaces

STRUCTURE OF METAL-OXIDE INTERFACES

1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi
Keyword(s):  
Metal Oxide ◽  
Oxide Interfaces ◽  
Structure Of Metal

METAL-OXIDE INTERFACES OBTAINED BY SELECTIVE CHEMICAL REDUCTION OF LAMELLAR OXIDE-OXIDE EUTECTIC STRUCTURES

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-781-C1-787
Author(s):  
B. BONVALOT ◽  
G. DHALENNE ◽  
F. MILLOT ◽  
A. REVCOLEVSCHI
Keyword(s):  
Metal Oxide ◽  
Chemical Reduction ◽  
Oxide Interfaces ◽  
Selective Chemical

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

INTERACTIONS AT METAL/OXIDE AND OXIDE/OXIDE INTERFACES STUDIED BY ULTRATHIN FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Film Growth ◽  
Ultrathin Film ◽  
Reaction Products ◽  
Impurity Effects ◽  
Crystal Surfaces ◽  
Oxide Interfaces ◽  
Single Crystal Surfaces ◽  
Oxide Substrates

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.

scholarly journals Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Secondary Electron ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Switching Effect ◽  
Metal Oxide Films ◽  
Secondary Electron Yield ◽  
Resistive Switching Effect
Sign in / Sign up

Export Citation Format

Share Document