Noise characteristics and detectivity of YBa2Cu3O7superconducting bolometers: Bias current, frequency, and temperature dependence

1996 ◽  
Vol 79 (4) ◽  
pp. 2006-2011 ◽  
Author(s):  
M. Fardmanesh ◽  
A. Rothwarf ◽  
K. J. Scoles
2020 ◽  
pp. 93-104
Author(s):  
Mykola Kurach ◽  
Oleksandr Yemets

The article covers issues related to the ways of improvement an asynchronous engine. The features of modernization of asynchronous motors aimed at increasing their energy efficiency are considered. The reasons for the low average load of this engine in the electric drive, especially the traditional and the newest approaches to the calculation of such engines, are analyzed. A new method of executing a stator winding (combined windings) of an electric motor, which has a significant economic effect, is characterized. It is noted that this method of performing the stator winding provides: the ability to adjust the speed at a constant current frequency by gradually changing the voltage throughout the speed range; soft and stable mechanical characteristics; consumption of smaller starting currents and increase of a twisting moment; improvement of vibration and noise characteristics. The importance and peculiarities of studying the methods of increasing the energy efficiency of asynchronous engines by future teachers is substantiated. In this context, the study of improving the efficiency of electrical installations, in particular induction motors, is important in the formation of professional competencies of teachers related to the ability to analyze and evaluate objects of the technological environment and the ability to organize research activities of students in the process of working on educational projects. . The main methods of forming these competencies are the method of specific situations (case method), as well as the method of algorithm for solving inventive problems. Key words: asynchronous engine, energy efficiency, technological processes, electric drive, combined windings, future teachers of technology, the method of specific situations (case method), the method of algorithm for solving inventive problems (the Innovation Algorithm).


2020 ◽  
pp. 2150134
Author(s):  
Ya-Yi Chen ◽  
Yuan Liu ◽  
Yuan Ren ◽  
Zhao-Hui Wu ◽  
Li Wang ◽  
...  

In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.


AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035211
Author(s):  
M. Lindemann ◽  
N. Jung ◽  
P. Stadler ◽  
T. Pusch ◽  
R. Michalzik ◽  
...  

1990 ◽  
Vol 192 ◽  
Author(s):  
M. E. Zvanut ◽  
K. Wang ◽  
D. Han ◽  
M. Silver

ABSTRACTThe transient forward bias current of a-SI:H p-i-n diodes has been measured as a function of temperature and voltage. The transient shows an initial decay followed by a substantial rise which suggests a large value for the ratio of the carrier lifetime to the transit time as demonstrated by Shapiro. We found that both the time at which the rise begins and the ratio of the final saturated current to the minimum current increase with decreasing temperature for temperature greater than a characteristic temperature, Tc. For T < Tc, both the time and the ratio abruptly decrease with temperature. We attribute this change in temperature dependence to a change in the transport kinetics from ballistic to hopping controlled recombination.


1991 ◽  
Vol 219 ◽  
Author(s):  
R. A. Street ◽  
M. Hack

ABSTRACTMetastable defects are induced in a-Si:H p-i-n devices by a forward bias current. The defect density increases approximately as the square root of time, reaching saturation at long inducing times, and with a weak temperature dependence. Current-induced defect annihilation is observed, in which the current causes a reduction in the previously induced defect density. Calculations of the changes in the forward bias current for different bulk defect densities are able to account for the measured results.


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