scholarly journals Bias current and temperature dependence of polarization dynamics in spin-lasers with electrically tunable birefringence

AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035211
Author(s):  
M. Lindemann ◽  
N. Jung ◽  
P. Stadler ◽  
T. Pusch ◽  
R. Michalzik ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Bias Current

Experimental Determination for the Transition Temperature Between Ballistic and Hopping Controlled Recombination in a-Si:H

1990 ◽  
Vol 192 ◽  
Author(s):  
M. E. Zvanut ◽  
K. Wang ◽  
D. Han ◽  
M. Silver
Keyword(s):  
Transition Temperature ◽  
Temperature Dependence ◽  
Experimental Determination ◽  
Transit Time ◽  
Carrier Lifetime ◽  
Characteristic Temperature ◽  
Forward Bias ◽  
Bias Current ◽  
Current Increase ◽  
Substantial Rise

ABSTRACTThe transient forward bias current of a-SI:H p-i-n diodes has been measured as a function of temperature and voltage. The transient shows an initial decay followed by a substantial rise which suggests a large value for the ratio of the carrier lifetime to the transit time as demonstrated by Shapiro. We found that both the time at which the rise begins and the ratio of the final saturated current to the minimum current increase with decreasing temperature for temperature greater than a characteristic temperature, Tc. For T < Tc, both the time and the ratio abruptly decrease with temperature. We attribute this change in temperature dependence to a change in the transport kinetics from ballistic to hopping controlled recombination.

Defect Creation by Forward Bias in Amorphous Silicon P-I-N Diodes

1991 ◽  
Vol 219 ◽  
Author(s):  
R. A. Street ◽  
M. Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Forward Bias ◽  
Bias Current ◽  
Square Root ◽  
Weak Temperature Dependence ◽  
Defect Creation ◽  
Defect Densities

ABSTRACTMetastable defects are induced in a-Si:H p-i-n devices by a forward bias current. The defect density increases approximately as the square root of time, reaching saturation at long inducing times, and with a weak temperature dependence. Current-induced defect annihilation is observed, in which the current causes a reduction in the previously induced defect density. Calculations of the changes in the forward bias current for different bulk defect densities are able to account for the measured results.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

Temperature dependence of generation-recombination noise in p-n junctions

2002 ◽  
Vol 12 (3) ◽  
pp. 71-74
Author(s):  
J. A. Jiménez Tejada ◽  
A. Godoy ◽  
A. Palma ◽  
P. Cartujo
Keyword(s):  
Temperature Dependence
Sign in / Sign up

Export Citation Format

Share Document