1/f noise characteristics of SEJ Y-Ba-Cu-O rf-SQUIDs on LaAlO/sub 3/ substrate and the step structure, film, and temperature dependence

2001 ◽  
Vol 11 (1) ◽  
pp. 1363-1366 ◽  
Author(s):  
M. Fardmanesh ◽  
J. Schubert ◽  
R. Akram ◽  
M. Bick ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Step Structure ◽  
Noise Characteristics ◽  
Rf Squids

Temperature dependence of conduction and low frequency noise characteristics in GaN Schottky barrier diodes

2020 ◽  
pp. 2150134
Author(s):  
Ya-Yi Chen ◽  
Yuan Liu ◽  
Yuan Ren ◽  
Zhao-Hui Wu ◽  
Li Wang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Flicker Noise ◽  
Forward Bias ◽  
Low Frequency ◽  
Frequency Noise ◽  
Schottky Barrier Diodes ◽  
Low Frequency Noise ◽  
Zero Bias ◽  
Noise Characteristics

In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise ([Formula: see text] noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on [Formula: see text] noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.

Temperature dependence of the step structure of vicinal Si(001) surfaces

1992 ◽  
Vol 275 (1-2) ◽  
pp. 1-15 ◽  
Author(s):  
C.E. Aumann ◽  
J.J. de Miguel ◽  
R. Kariotis ◽  
M.G. Lagally
Keyword(s):  
Temperature Dependence ◽  
Step Structure

Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs

2015 ◽  
Vol 54 (10) ◽  
pp. 100301 ◽  
Author(s):  
Po Chin Huang ◽  
Ching Yao Chang ◽  
Osbert Cheng ◽  
San Lein Wu ◽  
Shoou Jinn Chang
Keyword(s):  
Temperature Dependence ◽  
Low Frequency ◽  
Uniaxial Tensile ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Temperature Dependence of Magnetic Domains and Wall Structures

1972 ◽  
Vol 30 ◽  
pp. 496-497
Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa
Keyword(s):  
Temperature Dependence ◽  
Domain Walls ◽  
Magnetic Domain ◽  
Iron Film ◽  
Objective Lens ◽  
Lorentz Microscopy ◽  
Domain Structures ◽  
Wall Structures ◽  
Crystal Films ◽  
Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

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