Experimental Determination for the Transition Temperature Between Ballistic and Hopping Controlled Recombination in a-Si:H

1990 ◽  
Vol 192 ◽  
Author(s):  
M. E. Zvanut ◽  
K. Wang ◽  
D. Han ◽  
M. Silver
Keyword(s):  
Transition Temperature ◽  
Temperature Dependence ◽  
Experimental Determination ◽  
Transit Time ◽  
Carrier Lifetime ◽  
Characteristic Temperature ◽  
Forward Bias ◽  
Bias Current ◽  
Current Increase ◽  
Substantial Rise

ABSTRACTThe transient forward bias current of a-SI:H p-i-n diodes has been measured as a function of temperature and voltage. The transient shows an initial decay followed by a substantial rise which suggests a large value for the ratio of the carrier lifetime to the transit time as demonstrated by Shapiro. We found that both the time at which the rise begins and the ratio of the final saturated current to the minimum current increase with decreasing temperature for temperature greater than a characteristic temperature, Tc. For T < Tc, both the time and the ratio abruptly decrease with temperature. We attribute this change in temperature dependence to a change in the transport kinetics from ballistic to hopping controlled recombination.

Defect Creation by Forward Bias in Amorphous Silicon P-I-N Diodes

1991 ◽  
Vol 219 ◽  
Author(s):  
R. A. Street ◽  
M. Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Forward Bias ◽  
Bias Current ◽  
Square Root ◽  
Weak Temperature Dependence ◽  
Defect Creation ◽  
Defect Densities

ABSTRACTMetastable defects are induced in a-Si:H p-i-n devices by a forward bias current. The defect density increases approximately as the square root of time, reaching saturation at long inducing times, and with a weak temperature dependence. Current-induced defect annihilation is observed, in which the current causes a reduction in the previously induced defect density. Calculations of the changes in the forward bias current for different bulk defect densities are able to account for the measured results.

TEMPERATURE DEPENDENCE OF THE STRUCTURE OF Al(110) AND Au(110) SURFACES

1997 ◽  
Vol 04 (06) ◽  
pp. 1095-1101 ◽  
Author(s):  
M. SCHWARZ ◽  
C. MAYER ◽  
P. VON BLANCKENHAGEN ◽  
W. SCHOMMERS
Keyword(s):  
Transition Temperature ◽  
Electron Diffraction ◽  
Temperature Dependence ◽  
Characteristic Temperature ◽  
Surface Melting ◽  
Low Energy ◽  
Temperature Dependent ◽  
Low Energy Electron Diffraction ◽  
Roughening Transition ◽  
Low Energy Electron

By temperature-dependent low energy electron diffraction experiments at the Al(110) and the Au(110) surface the roughening transition temperature and the characteristic temperature for the onset of surface melting were determined.

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