Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

2010 ◽  
Vol 57 (9) ◽  
pp. 2353-2357 ◽  
Author(s):  
Zhi Hong Liu ◽  
Geok Ing Ng ◽  
Subramaniam Arulkumaran
2005 ◽  
Vol 26 (8) ◽  
pp. 521-523 ◽  
Author(s):  
Zhiqun Cheng ◽  
Jie Liu ◽  
Yugang Zhou ◽  
Yong Cai ◽  
K.J. Chen ◽  
...  

2004 ◽  
Vol 40 (1) ◽  
pp. 80 ◽  
Author(s):  
J.-W. Lee ◽  
V. Kumar ◽  
R. Schwindt ◽  
A. Kuliev ◽  
R. Birkhahn ◽  
...  
Keyword(s):  

1999 ◽  
Author(s):  
Hidenori Shimawaki ◽  
Masafumi Kawanaka ◽  
Norio Goto

Author(s):  
Y.-F. WU ◽  
M. MOORE ◽  
T. WISLEDER ◽  
P.M. CHAVARKAR ◽  
P. PARIKH ◽  
...  

2001 ◽  
Vol 01 (01) ◽  
pp. R81-R100 ◽  
Author(s):  
R. KATILIUS ◽  
A. MATULIONIS

The paper overviews recent progress in the field of hot-electron microwave noise and fluctuations with an emphasis on contribution due to inter-electron collisions that are inevitable in doped semi-conductors at a relatively high density of mobile electrons. A special attention is paid to the problem of hot-electron diffusion in the range of electric fields where inter-electron collisions are important and Price's relation connecting diffusion and noise characteristics is not necessarily valid. The basic and up-to-date information is presented on methods and advances in the field where combined analytic and Monte Carlo methods of investigation are indispensable while seeking coherent understanding of experimental results.


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