Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Chih-Hao Dai; Ting-Chang Chang; Ann-Kuo Chu; Yuan-Jui Kuo; Szu-Han Ho; Tien-Yu Hsieh; Wen-Hung Lo; Ching-En Chen; Jou-Miao Shih; Wan-Lin Chung; Bai-Shan Dai; Hua-Mao Chen; Guangrui Xia; Osbert Cheng; Cheng Tung Huang

doi:10.1063/1.3608241

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3608241 ◽

2011 ◽

Vol 99 (1) ◽

pp. 012106 ◽

Cited By ~ 27

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Carrier Effect ◽

High K ◽

Hot Carrier Effect

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC10 ◽

Cited By ~ 2

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.69 ◽

2001 ◽

Vol 40 (Part 1, No. 1) ◽

pp. 69-74 ◽

Cited By ~ 5

Author(s):

Steve S. Chung ◽

Shang-Jr Chen ◽

Wen-Jei Yang ◽

Cherng-Ming Yih ◽

Jiuun-Jer Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect

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Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8739 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8739-8742 ◽

Cited By ~ 4

Author(s):

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Wafer Direct Bonding

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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Cited By ~ 4

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Physical Understanding ◽

High K

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Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4493 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4493-4499 ◽

Cited By ~ 2

Author(s):

Shang-Jr Chen ◽

Steve Shao-Shiun Chung ◽

Horng-Chih Lin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect

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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Acta Physica Sinica ◽

10.7498/aps.49.1241 ◽

2000 ◽

Vol 49 (7) ◽

pp. 1241

Author(s):

REN HONG-XIA ◽

HAO YUE ◽

XU DONG-GANG

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.061503 ◽

2011 ◽

Vol 50 (6R) ◽

pp. 061503 ◽

Cited By ~ 1

Author(s):

Ryosuke Iijima ◽

Lisa F. Edge ◽

John Bruley ◽

Vamsi Paruchuri ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Substrates ◽

Metal Gate ◽

High K ◽

Orientation Difference

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