New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors

Steve S. Chung; Shang-Jr Chen; Wen-Jei Yang; Cherng-Ming Yih; Jiuun-Jer Yang

doi:10.1143/jjap.40.69

New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.69 ◽

2001 ◽

Vol 40 (Part 1, No. 1) ◽

pp. 69-74 ◽

Cited By ~ 5

Author(s):

Steve S. Chung ◽

Shang-Jr Chen ◽

Wen-Jei Yang ◽

Cherng-Ming Yih ◽

Jiuun-Jer Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect

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Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8739 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8739-8742 ◽

Cited By ~ 4

Author(s):

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Wafer Direct Bonding

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Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4493 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4493-4499 ◽

Cited By ~ 2

Author(s):

Shang-Jr Chen ◽

Steve Shao-Shiun Chung ◽

Horng-Chih Lin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect

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Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3608241 ◽

2011 ◽

Vol 99 (1) ◽

pp. 012106 ◽

Cited By ~ 27

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Carrier Effect ◽

High K ◽

Hot Carrier Effect

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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Acta Physica Sinica ◽

10.7498/aps.49.1241 ◽

2000 ◽

Vol 49 (7) ◽

pp. 1241

Author(s):

REN HONG-XIA ◽

HAO YUE ◽

XU DONG-GANG

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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On resolving hot carrier induced degradation mechanisms in silicon‐on‐sapphire metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.110646 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1912-1914 ◽

Cited By ~ 1

Author(s):

E. Y. Chao ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Hot Carrier

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Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5889 ◽

2005 ◽

Vol 44 (8) ◽

pp. 5889-5892 ◽

Cited By ~ 2

Author(s):

Yukiharu Uraoka ◽

Hiroyuki Honda ◽

Takashi Fuyuki ◽

Takaoki Sasaki ◽

Mitsuo Yasuhira

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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Temperature-dependent degradation mechanisms of channel mobility in ZrO2-gated n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2211307 ◽

2006 ◽

Vol 88 (24) ◽

pp. 242905 ◽

Cited By ~ 6

Author(s):

Ming-Tsong Wang ◽

Bonds Yi-Yi Cheng ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Degradation Mechanisms ◽

Temperature Dependent ◽

Channel Mobility

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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