2009 International Symposium on VLSI Technology, Systems, and Applications

The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159300 ◽

2009 ◽

Cited By ~ 18

Author(s):

B. Parvais ◽

A. Mercha ◽

N. Collaert ◽

R. Rooyackers ◽

I. Ferain ◽

...

Keyword(s):

Device Architecture

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Impacts of NBTI on SRAM array with power gating structure

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159298 ◽

2009 ◽

Cited By ~ 1

Author(s):

Hao-I Yang ◽

Ching-Te Chuang ◽

Wei Hwang

Keyword(s):

Power Gating

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Nanoelectromechanical systems for ultra-low-power computing and VLSI

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159286 ◽

2009 ◽

Author(s):

Philip Feng

Keyword(s):

Low Power ◽

Nanoelectromechanical Systems ◽

Ultra Low Power ◽

Low Power Computing

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CMOS technology roadmap projection including parasitic effects

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159299 ◽

2009 ◽

Cited By ~ 7

Author(s):

Lan Wei ◽

Frederic Boeuf ◽

Thomas Skotnicki ◽

H.-S. Philip Wong

Keyword(s):

Cmos Technology ◽

Technology Roadmap ◽

Parasitic Effects

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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159330 ◽

2009 ◽

Author(s):

Hock-Chun Chin ◽

Xinke Liu ◽

Leng-Seow Tan ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Cmos Compatible ◽

High K Dielectric

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High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159305 ◽

2009 ◽

Author(s):

D.-G. Park ◽

K. Stein ◽

K. Schruefer ◽

Y. Lee ◽

J.-P. Han ◽

...

Keyword(s):

Performance Evaluation ◽

Low Power ◽

Critical Path ◽

Logic Circuits ◽

Metal Gate ◽

Bulk Technology

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Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159270 ◽

2009 ◽

Author(s):

Hidemitsu Aoki ◽

Takuroh Masuzumi ◽

Makoto Hara ◽

Daisuke Watanabe ◽

Chiharu Kimura ◽

...

Keyword(s):

Carbon Nitride ◽

Nitride Film ◽

Carbon Nitride Film ◽

Boron Carbon Nitride ◽

Low K ◽

Boron Carbon

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Single-Metal Dual-Dielectric (SMDD) gate-first CMOS integration towards low VT and high performance

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159287 ◽

2009 ◽

Author(s):

L.-A. Ragnarsson ◽

T. Schram ◽

E. Rohr ◽

F. Sebaai ◽

P. Kelkar ◽

...

Keyword(s):

High Performance

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A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159280 ◽

2009 ◽

Cited By ~ 2

Author(s):

C. H. Liu ◽

Y. M. Lin ◽

Y. Sakamoto ◽

R. J. Yang ◽

D. Y. Yin ◽

...

Keyword(s):

Flash Memory ◽

High Performance ◽

Nand Flash ◽

Nand Flash Memory

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Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

2009 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2009.5159278 ◽

2009 ◽

Cited By ~ 6

Author(s):

B. Rajendran ◽

M. Breitwisch ◽

R. Cheek ◽

M-H. Lee ◽

Y-H. Shih ◽

...

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Poly Silicon ◽

Change Memory

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2009 International Symposium on VLSI Technology, Systems, and Applications
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET

Impacts of NBTI on SRAM array with power gating structure

Nanoelectromechanical systems for ultra-low-power computing and VLSI

CMOS technology roadmap projection including parasitic effects

Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond

Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection

Single-Metal Dual-Dielectric (SMDD) gate-first CMOS integration towards low VT and high performance

A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

Export Citation Format

2009 International Symposium on VLSI Technology, Systems, and ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The device architecture dilemma for CMOS technologies: Opportunities & challenges of finFET over planar MOSFET

Impacts of NBTI on SRAM array with power gating structure

Nanoelectromechanical systems for ultra-low-power computing and VLSI

CMOS technology roadmap projection including parasitic effects

Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts

High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond

Boron carbon nitride film containing hydrogen for 2nm node low-k interconnection

Single-Metal Dual-Dielectric (SMDD) gate-first CMOS integration towards low VT and high performance

A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory

Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

2009 International Symposium on VLSI Technology, Systems, and Applications
Latest Publications