Point defect‐based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon

1995 ◽  
Vol 78 (1) ◽  
pp. 176-186 ◽  
Author(s):  
H. U. Jäger
Keyword(s):  
Point Defect ◽  
Crystalline Silicon ◽  
Electrical Activation ◽  
Ion Implanted

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

1995 ◽  
Vol 389 ◽  
Author(s):  
H. U. Jäger
Keyword(s):  
Point Defect ◽  
Anomalous Diffusion ◽  
Crystalline Silicon ◽  
Electrical Activation ◽  
Transient Diffusion ◽  
Model Predictions ◽  
Post Implantation

ABSTRACTA point defect-based model, which has been developed to describe diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing, is used to simulate the anomalous diffusion of boron implanted into silicon along the random and [100] channeling directions. The model predictions are compared to data measured by Chu et al.

Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

1993 ◽  
Vol 63 (8) ◽  
pp. 1125-1127 ◽  
Author(s):  
N. Yu ◽  
K. B. Ma ◽  
C. Kirschbaum ◽  
K. Varahramyan ◽  
W. K. Chu
Keyword(s):  
Thermal Annealing ◽  
Electrical Activation ◽  
Ion Implanted

scholarly journals Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

2010 ◽  
Vol 25 (5) ◽  
pp. 880-889 ◽  
Author(s):  
Zhi-Hui Xu ◽  
Young-Bae Park ◽  
Xiaodong Li
Keyword(s):  
Mechanical Properties ◽  
Tribological Properties ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
Damage Mechanism ◽  
Mechanical And Tribological Properties ◽  
Tribological Characterization ◽  
The Relationship ◽  
Ion Implanted

Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.

Oxygen-Nitrogen Interactions in Ion-Implanted Silicon

1985 ◽  
Vol 46 ◽  
Author(s):  
H. J. Stein
Keyword(s):  
Infrared Absorption ◽  
Crystalline Silicon ◽  
Vibrational Modes ◽  
Absorption Bands ◽  
Infrared Absorption Bands ◽  
Ion Implanted

AbstractInteraction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either 14N or 160 alone are observed after sequential implantation of 14N and 160 into overlapping profiles followed by annealing at 500°C. The new bands indicate oxygen - nitrogen interactions and are ascribed to Si-N vibrational modes with oxygen in nearby interstitial sites.

Boron electrical activation in dual B + + N + and B + + Ar + ion-implanted silicon

1996 ◽  
Vol 62 (4) ◽  
pp. 355-358
Author(s):  
V. B. Odzhaev ◽  
V. N. Popok ◽  
V. S. Prosolovich ◽  
V. Hnatowicz
Keyword(s):  
Electrical Activation ◽  
Ion Implanted
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