Oxygen-Nitrogen Interactions in Ion-Implanted Silicon

1985 ◽  
Vol 46 ◽  
Author(s):  
H. J. Stein

AbstractInteraction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either 14N or 160 alone are observed after sequential implantation of 14N and 160 into overlapping profiles followed by annealing at 500°C. The new bands indicate oxygen - nitrogen interactions and are ascribed to Si-N vibrational modes with oxygen in nearby interstitial sites.

1998 ◽  
Vol 7 (11-12) ◽  
pp. 1657-1662 ◽  
Author(s):  
M.A. Djouadi ◽  
S. Ilias ◽  
D. Bouchier ◽  
J. Pascallon ◽  
G. Sené ◽  
...  

1980 ◽  
Vol 72 (4) ◽  
pp. 2356-2363 ◽  
Author(s):  
E. Zouboulis ◽  
N. D. Bhaskar ◽  
A. Vasilakis ◽  
W. Happer

1963 ◽  
Vol 16 (1) ◽  
pp. 93 ◽  
Author(s):  
RA Jones

The positions and intensities of the characteristic infrared absorption bands of the nucleus are recorded and discussed for thirty-five 2-monosubstituted pyrroles.


1933 ◽  
Vol 43 (11) ◽  
pp. 883-886 ◽  
Author(s):  
G. B. B. M. Sutherland

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