Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

1995 ◽  
Vol 389 ◽  
Author(s):  
H. U. Jäger
Keyword(s):  
Point Defect ◽  
Anomalous Diffusion ◽  
Crystalline Silicon ◽  
Electrical Activation ◽  
Transient Diffusion ◽  
Model Predictions ◽  
Post Implantation

ABSTRACTA point defect-based model, which has been developed to describe diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing, is used to simulate the anomalous diffusion of boron implanted into silicon along the random and [100] channeling directions. The model predictions are compared to data measured by Chu et al.

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Continuum Modeling ◽  
Implantation Damage ◽  
Post Implantation

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

High Dose Al+ Implanted and Microwave Annealed 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 817-820
Author(s):  
Roberta Nipoti ◽  
A. Nath ◽  
Mulpuri V. Rao ◽  
Anders Hallén ◽  
F. Mancarella ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrical Activation ◽  
High Dose ◽  
Annealing Temperatures ◽  
Microwave Annealing ◽  
Post Implantation

A post implantation microwave annealing technique has been applied for the electrical activation of Al+ implanted ions in semi-insulating 4H-SiC. The annealing temperatures have been 2000-2100°C. The implanted Al concentration has varied from 5 x 1019 to 8 x 1020 cm-3. A minimum resistivity of 2 x 10-2 Ω∙cm and about 70% electrical activation of the implanted Al has been measured at room temperature for an implanted Al concentration of 8 x 1020 cm-3 and a microwave annealing at 2100°C for 30 s.

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

2010 ◽  
Vol 645-648 ◽  
pp. 717-720 ◽  
Author(s):  
Laurent Ottaviani ◽  
Stéphane Biondo ◽  
Stéphane Morata ◽  
Olivier Palais ◽  
Thierry Sauvage ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Annealing Temperature ◽  
Sample Volume ◽  
Electrical Activation ◽  
Electrical Measurements ◽  
Dopant Activation ◽  
Heating And Cooling ◽  
Heating Up ◽  
Crystal Volume ◽  
Post Implantation

We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

A Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
Gary A. Ruggles ◽  
Shin-Nam Hong ◽  
Jimmie J. Wortman ◽  
Mehmet Ozturk ◽  
Edward R. Myers ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Low Energy ◽  
Electrical Activation ◽  
Silicon Substrates ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Rapid Thermal Anneal ◽  
Boron Segregation

ABSTRACTLow energy (6 keV) BF2 implantation was carried out using single crystal, Ge-preamorphized, and Si-preamorphized silicon substrates. Implanted substrates were rapid thermal annealed at temperatures from 600°C to 1050'C and boron channeling, diffusion, and activation were studied. Ge and Si preamorphization energies were chosen to produce nearly identical amorphous layer depths as determined by TEM micrographs (approximately 40 nm in both cases). Boron segregation to the end-of-range damage region was observed for 6 keV BF2 implantation into crystalline silicon, although none was detected in preamorphized substrates. Junction depths as shallow as 50 nm were obtained. In this ultra-low energy regime for ion implantation, boron diffusion was found to be as important as boron channeling in determining the junction depth, and thus, preamorphization does not result in a significant reduction in junction depth. However, the formation of junctions shallower than 100 rmu appears to require RTA temperatures below 1000°C which can lead to incomplete activation unless the substrate has been preamorphized. In the case of preamorphized samples, Hall measurements revealed that nearly complete electrical activation can be obtained for preamorphized samples after a 10 second rapid thermal anneal at temperatures as low as 600°C.

Sign in / Sign up

Export Citation Format

Share Document