Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. I. Atomic layer epitaxy

1995 ◽  
Vol 78 (4) ◽  
pp. 2725-2739 ◽  
Author(s):  
Housei Akazawa ◽  
Yuichi Utsumi
Keyword(s):  
Synchrotron Radiation ◽  
Reaction Kinetics ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Si Epitaxy

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals Kinetics of 1- and 2-methylallyl + O2 reaction, investigated by photoionisation using synchrotron radiation

2021 ◽  
Author(s):  
Domenik Schleier ◽  
Engelbert Reusch ◽  
Marius Gerlach ◽  
Tobias Preitschopf ◽  
Deb Pratim Mukhopadhyay ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Reaction Kinetics ◽  
Molecular Oxygen ◽  
Light Source ◽  
Storage Ring ◽  
Vacuum Ultraviolet ◽  
Flow Tube ◽  
Tube Reactor ◽  
Swiss Light Source ◽  
Kinetics Of

The reaction kinetics of the isomers of the methylallyl radical with molecular oxygen has been studied in a flow tube reactor at the vacuum ultraviolet (VUV) beamline of the Swiss Light Source storage ring.

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy
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