Raman Spectroscopy for Nondestructive Depth Profile Studies of Ion Implantation in Silicon

1986 ◽  
Vol 133 (5) ◽  
pp. 988-993 ◽  
Author(s):  
A. C. deWilton ◽  
M. Simard‐Normandin ◽  
P. T. T. Wong
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Depth Profile

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Ion implantation effect on Resonance Raman spectroscopy of double-wall carbon nanotubes

2010 ◽  
Author(s):  
E. C. Moreira ◽  
G. D. Saraiva ◽  
A. G. Souza Filho ◽  
G. Braunstein ◽  
H. Muramatsu ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Double Wall

Depth profile studies of extended defects induced by ion implantation in Si and Al

1980 ◽  
Vol 49 (1-3) ◽  
pp. 75-79 ◽  
Author(s):  
S. T. Picraux ◽  
D. M. Follstaedt ◽  
P. Baeri ◽  
S. U. Campisano ◽  
G. Foti ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Extended Defects

Interaction of Deuterium with Buried Oxides in Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
S. M. Myers
Keyword(s):  
Ion Implantation ◽  
Nuclear Reaction ◽  
Depth Profile ◽  
Nuclear Reaction Analysis ◽  
Measurable Quantity ◽  
Buried Oxide ◽  
Hydrogen Exposure ◽  
Deuterium Gas ◽  
Defect Densities ◽  
Zone Melt

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Structural Relaxation of Amorphous Silicon Induced by High Temperature Annealing

1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Ion Implantation ◽  
Amorphous Silicon ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
High Temperature Annealing ◽  
Temperature Range ◽  
Amorphous Si ◽  
Anneal Temperature

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

2007 ◽  
Vol 102 (2) ◽  
pp. 024309 ◽  
Author(s):  
S. Yerci ◽  
I Yildiz ◽  
M. Kulakci ◽  
U. Serincan ◽  
M. Barozzi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profile ◽  
Silicon Nanocrystals

scholarly journals 1011 Depth profile for DLC films deposited by plasma ion implantation with CH_4

2007 ◽  
Vol 2007 (0) ◽  
pp. 253-254
Author(s):  
Atsushi MITSUO ◽  
Masahiro KAWAGUCHI ◽  
Kazuo MORIKAWA ◽  
Saiko AOKI ◽  
Hideto SUZUKI
Keyword(s):  
Ion Implantation ◽  
Depth Profile

Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

2014 ◽  
Vol 662 ◽  
pp. 115-118
Author(s):  
Jian Hua Yang ◽  
Xing Jian Ma
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Depth Profile ◽  
High Dose ◽  
H13 Steel ◽  
Depth Profiles ◽  
Concentration Depth Profile ◽  
Charged Ions ◽  
Concentration Depth Profiles ◽  
Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

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