Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

Y. Ma

doi:10.1116/1.587792

Deposition of single phase, homogeneous silicon oxynitride by remote plasma-enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587792 ◽

1994 ◽

Vol 12 (4) ◽

pp. 2504 ◽

Cited By ~ 36

Author(s):

Y. Ma

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Single Phase ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589003 ◽

1996 ◽

Vol 14 (4) ◽

pp. 2674 ◽

Cited By ~ 39

Author(s):

D. G. Park

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP‐based metal‐insulator‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.100426 ◽

1988 ◽

Vol 53 (14) ◽

pp. 1291-1293 ◽

Cited By ~ 14

Author(s):

C. Licoppe ◽

J. M. Moison ◽

Y. I. Nissim ◽

J. L. Regolini ◽

D. Bensahel

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Surface Reactions ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices

Journal of The Electrochemical Society ◽

10.1149/1.2132639 ◽

1976 ◽

Vol 123 (10) ◽

pp. 1570-1573 ◽

Cited By ~ 40

Author(s):

E. Kaplan ◽

M. Balog ◽

D. Frohman‐Bentchkowsky

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Tantalum Pentoxide ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Fabrication of (NH[sub 4])[sub 2]S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1667504 ◽

2004 ◽

Vol 22 (3) ◽

pp. 1027 ◽

Cited By ~ 10

Author(s):

A. Jaouad ◽

V. Aimez ◽

Ç. Aktik ◽

K. Bellatreche ◽

A. Souifi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Low Frequency ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Frequency Plasma

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ChemInform Abstract: CHEMICAL VAPOR DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES

Chemischer Informationsdienst ◽

10.1002/chin.197705018 ◽

1977 ◽

Vol 8 (5) ◽

pp. no-no

Author(s):

E. KAPLAN ◽

M. BALOG ◽

D. FROHMAN-BENTCHKOWSKY

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Tantalum Pentoxide ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.331380 ◽

1982 ◽

Vol 53 (7) ◽

pp. 5037-5043 ◽

Cited By ~ 38

Author(s):

Yukihiro Hirota ◽

Takeshi Kobayashi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Semiconductor Devices ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Insulators

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Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590013 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1087 ◽

Cited By ~ 3

Author(s):

M. Hernández Vélez

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Dielectric Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Remote Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition

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Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications

Journal of Electronic Materials ◽

10.1007/s11664-997-0153-1 ◽

1997 ◽

Vol 26 (3) ◽

pp. 212-216 ◽

Cited By ~ 10

Author(s):

C. C. Tin ◽

Y. Song ◽

T. Isaacs Smith ◽

V. Madangakli ◽

T. S. Sudarshan

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Semiconductor Device ◽

Chemical Vapor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Device Applications ◽

Metalorganic Chemical

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Formation of Metal-Insulator-Semiconductor Structure (B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l334 ◽

1997 ◽

Vol 36 (Part 2, No. 3B) ◽

pp. L334-L336

Author(s):

Yukio Osaka ◽

Nahotoshi Nakagawa ◽

Kenji Kohno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Plasma Chemical ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Plasma Chemical Vapor Deposition

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