Excitonic energy range dielectric function in GaAs/Ga0.7Al0.3As single quantum wells at room temperature

1994 ◽  
Vol 75 (10) ◽  
pp. 5316-5320 ◽  
Author(s):  
M. Sigrist ◽  
G. Chassaing ◽  
A. Hameury
Keyword(s):  
Energy Range ◽  
Quantum Wells ◽  
Dielectric Function ◽  
Room Temperature ◽  
Single Quantum ◽  
Excitonic Energy

Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Y. Baltagi ◽  
C. Bru ◽  
T. Benyatrou ◽  
M.A. Garcia-Perez ◽  
G. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Growth Conditions ◽  
Surface Barrier ◽  
Single Quantum ◽  
Interface Defects ◽  
Growth Interruption ◽  
Different Temperatures ◽  
Inp Substrates ◽  
Pump Laser Beam

AbstractUsing Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

Room Temperature Dielectric Function of Low Dimensional TlMeX2

2003 ◽  
Vol 803 ◽  
Author(s):  
Nazim Mamedov ◽  
Kazuki Wakita ◽  
Seiji Akita ◽  
Yoshikazu Nakayama
Keyword(s):  
Band Structure ◽  
Energy Range ◽  
Dielectric Function ◽  
Optical Anisotropy ◽  
Room Temperature ◽  
Electronic States ◽  
Density Of Electronic States ◽  
Low Dimensional ◽  
Atomic States ◽  
First Time

ABSTRACTRoom temperature ellipsometric measurements of low dimensional TlMeX2 (Me=Ga, In; X=S,Se,Te) were performed in the photon energy range 1.5–6.5e V.Obtained ellipsometric data were then treated with allowance for optical anisotropy of the above materials. The components of dielectric function tensor were determined. The structures of the obtained dielectric function are interpreted in terms of the angle resolved photoemission and band structure results. The contribution of the atomic states of each atom (Tl, In, Se) in the band states in the point M of the Brillouin zone is traced back using LCAO analysis. An ultraviolet window in the joint density of electronic states of some of TlMeX2 is disclosed and substantiated to be a sign of ferroelectricity at room temperature. For the first time the nanorods of TlMeX2 are demonstrated.

scholarly journals Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy

1993 ◽  
Vol 47 (12) ◽  
pp. 7198-7207 ◽  
Author(s):  
A. Dimoulas ◽  
J. Leng ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
C. Michelakis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Temperature Modulation ◽  
Interband Transitions ◽  
Single Quantum ◽  
Modulation Spectroscopy

Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

1997 ◽  
Vol 71 (4) ◽  
pp. 425-427 ◽  
Author(s):  
C.-K. Sun ◽  
T.-L. Chiu ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells

2003 ◽  
Vol 799 ◽  
Author(s):  
Liangjin Wu ◽  
Shanthi Iyer ◽  
Kalyan Nunna ◽  
Jia Li ◽  
Sudhakar Bharatan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Blue Shift ◽  
Rf Plasma ◽  
Single Quantum ◽  
Growth Study ◽  
Gaas Sample ◽  
Mbe Growth ◽  
Gaas Substrates

ABSTRACTIn this work, the growth and properties of GaAsSbN single quantum wells are investigated. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy system with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of growth temperature on the optical properties of the layers. For reference low temperature photoluminescence (PL) characteristics of the GaAsSb/GaAs QWs as a function of Sb is also presented. A significant increase in PL intensity with a corresponding blue shift in emission energy and a decrease in full width at half maximum (FWHM) has been observed on annealing the GaAsSbN/GaAs sample in a nitrogen ambient at 700°C. PL emission wavelength as long as 1.52 μm at room temperature has been obtained on annealed samples.

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