scholarly journals Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy

1993 ◽  
Vol 47 (12) ◽  
pp. 7198-7207 ◽  
Author(s):  
A. Dimoulas ◽  
J. Leng ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
C. Michelakis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Temperature Modulation ◽  
Interband Transitions ◽  
Single Quantum ◽  
Modulation Spectroscopy

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Y. Baltagi ◽  
C. Bru ◽  
T. Benyatrou ◽  
M.A. Garcia-Perez ◽  
G. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Growth Conditions ◽  
Surface Barrier ◽  
Single Quantum ◽  
Interface Defects ◽  
Growth Interruption ◽  
Different Temperatures ◽  
Inp Substrates ◽  
Pump Laser Beam

AbstractUsing Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

Interband Transitions in GaInNAs/GaAs Single Quantum Wells

2002 ◽  
Vol 744 ◽  
Author(s):  
M. O. Manasreh ◽  
D. J. Friedman ◽  
W. Q. Ma ◽  
C. L. Workman ◽  
C. E. George ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Peak Position ◽  
Interband Transitions ◽  
Single Quantum ◽  
Pl Spectra ◽  
Vapor Deposition Technique ◽  
Pl Intensity

ABSTRACTPhotoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition technique on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In composition and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0 to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blue-shift in the PL spectra peak position energy in samples grown with high DMH/III ratio.

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