Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Y. Baltagi ◽  
C. Bru ◽  
T. Benyatrou ◽  
M.A. Garcia-Perez ◽  
G. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Growth Conditions ◽  
Surface Barrier ◽  
Single Quantum ◽  
Interface Defects ◽  
Growth Interruption ◽  
Different Temperatures ◽  
Inp Substrates ◽  
Pump Laser Beam

AbstractUsing Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
F. Peiró ◽  
A. Cornet ◽  
J. C. Ferrer ◽  
J. R. Morante ◽  
G. Halkias ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

Correlation Between Photoluminescence Spectral Features and Crystal Growth Temperature for Sige Single Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Gerling ◽  
S. Nilsson ◽  
H. P. Zeindl ◽  
U. Jagdhold
Keyword(s):  
Diffusion Process ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Surface Segregation ◽  
Excitation Power ◽  
Activation Energies ◽  
Photoluminescence Intensity ◽  
Single Quantum ◽  
Different Temperatures ◽  
Site Exchange

ABSTRACTSample temperature dependence and excitation power dependence of the photoluminescence intensity were investigated with respect to growth temperature for SiGe single quantum wells grown pseudomorphically to (100)-oriented Si by molecular beam epitaxy. The determined excitation power exponents and thermal activation energies show unambiguously that defect incorporation is effectively reduced at higher growth temperatures. However, at higher growth temperatures the SiGe-related spectral distribution is found to be shifted to higher photon energy which is attributed to intermixing of Ge and Si at the heterointerfaces, governed by diffusion as well as Ge surface segregation during growth. The diffusion process is studied separately by photoluminescence measurements upon thermal annealing at different temperatures and a diffusion model is presented where the diffusion process is assumed to be composed of two different mechanisms, interdiffusion, i.e. lattice-site-exchange diffusion, and point-defectinduced diffusion. The determined activation energies for the two diffusion mechanisms are in good agreement with previous results which confirm that the model gives a realistic picture of the diffusion process.

Surface relaxation kinetics and growth interruption effects in GaAs/AlAs single quantum wells

1993 ◽  
Vol 127 (1-4) ◽  
pp. 788-792 ◽  
Author(s):  
A. Yoshinaga ◽  
P. Mookherjee ◽  
R. Murray ◽  
J.H. Neave ◽  
B.A. Joyce
Keyword(s):  
Quantum Wells ◽  
Surface Relaxation ◽  
Single Quantum ◽  
Relaxation Kinetics ◽  
Growth Interruption

VLS Growth of Position-controlled InP Nanowires and Formation of Radial Heterostructures on Mask-patterned InP Substrates

2014 ◽  
Vol 1659 ◽  
pp. 181-186 ◽  
Author(s):  
Kenichi Kawaguchi ◽  
Hisao Sudo ◽  
Manabu Matsuda ◽  
Mitsuru Ekawa ◽  
Tsuyoshi Yamamoto ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Wavelength Region ◽  
Two Dimensional ◽  
Au Catalyst ◽  
Vapor Liquid Solid ◽  
Vls Growth ◽  
Hcl Gas ◽  
Inp Substrates ◽  
Anomalous Growth

ABSTRACTPosition-controlled InP nanowires (NWs) with separations of 10-100 μm were grown by the vapor-liquid-solid (VLS) method using Au-deposited SiO2-mask-patterned InP substrates. Excess indium species diffused from the large mask region formed plural tilted NW-like structures from single openings in addition to the vertical VLS NWs formed by Au catalyst. The introduction of HCl gas during the NW growth was found to efficiently suppress the tilted NW-like structures. Vertical InP NWs without anomalous growth were successfully formed by controlling the HCl flow rate. Moreover, single InP/InAsP/InP quantum wells (QWs) with wurtzite crystal phase structure were epitaxially grown on the sidewall of the position-controlled InP NWs, and two-dimensional arrayed patterns of photoluminescence (PL) coming from the radial QWs were clearly observed in the 1.3-μm wavelength region at room temperature.

scholarly journals Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy

1993 ◽  
Vol 47 (12) ◽  
pp. 7198-7207 ◽  
Author(s):  
A. Dimoulas ◽  
J. Leng ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
C. Michelakis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Temperature Modulation ◽  
Interband Transitions ◽  
Single Quantum ◽  
Modulation Spectroscopy

Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

1997 ◽  
Vol 71 (4) ◽  
pp. 425-427 ◽  
Author(s):  
C.-K. Sun ◽  
T.-L. Chiu ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence
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