Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths

2008 ◽  
Vol 92 (4) ◽  
pp. 041910 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
J. Misiewicz ◽  
M. Hümmer ◽  
K. Rößner ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Wells ◽  
Room Temperature ◽  
State Transitions ◽  
Single Quantum

Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Y. Baltagi ◽  
C. Bru ◽  
T. Benyatrou ◽  
M.A. Garcia-Perez ◽  
G. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Growth Conditions ◽  
Surface Barrier ◽  
Single Quantum ◽  
Interface Defects ◽  
Growth Interruption ◽  
Different Temperatures ◽  
Inp Substrates ◽  
Pump Laser Beam

AbstractUsing Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

scholarly journals Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy

1993 ◽  
Vol 47 (12) ◽  
pp. 7198-7207 ◽  
Author(s):  
A. Dimoulas ◽  
J. Leng ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
C. Michelakis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Temperature Modulation ◽  
Interband Transitions ◽  
Single Quantum ◽  
Modulation Spectroscopy

Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

1997 ◽  
Vol 71 (4) ◽  
pp. 425-427 ◽  
Author(s):  
C.-K. Sun ◽  
T.-L. Chiu ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Ground and excited state transitions in as-grown Ga0.64In0.36N0.046As0.954 quantum wells studied by contactless electroreflectance

2007 ◽  
Vol 90 (4) ◽  
pp. 041916 ◽  
Author(s):  
Robert Kudrawiec ◽  
Marta Gladysiewicz ◽  
Jan Misiewicz ◽  
Fumitaro Ishikawa ◽  
Klaus H. Ploog
Keyword(s):  
Excited State ◽  
Quantum Wells ◽  
State Transitions

Spectral Diffusion of Ultra-Narrow Fluorescence Spectra in Single Quantum Dots

1996 ◽  
Vol 452 ◽  
Author(s):  
S. A. Empedocles ◽  
D. J. Norris ◽  
M. G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Fluorescence Spectra ◽  
Room Temperature ◽  
Spectral Diffusion ◽  
Single Quantum ◽  
Acoustic Phonons ◽  
Single Quantum Dots

AbstractWe collect and spectrally resolve photoluminescence from single CdSe nanocrystallite quantum dots. By eliminating spectral inhomogeneities, we reveal resolution limited linewidths < 120μev at 10K. These lines are more than fifty times narrower than what has previously been reported using ensemble measurements. Light driven spectral diffusion is seen as a form of power broadening and may be the cause of surprisingly broad linewidths at room temperature. In addition, we see no evidence of excited state emission or coupling to acoustic phonons.

MBE Growth Study of GaAsSbN/GaAs Single Quantum Wells

2003 ◽  
Vol 799 ◽  
Author(s):  
Liangjin Wu ◽  
Shanthi Iyer ◽  
Kalyan Nunna ◽  
Jia Li ◽  
Sudhakar Bharatan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Blue Shift ◽  
Rf Plasma ◽  
Single Quantum ◽  
Growth Study ◽  
Gaas Sample ◽  
Mbe Growth ◽  
Gaas Substrates

ABSTRACTIn this work, the growth and properties of GaAsSbN single quantum wells are investigated. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy system with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of growth temperature on the optical properties of the layers. For reference low temperature photoluminescence (PL) characteristics of the GaAsSb/GaAs QWs as a function of Sb is also presented. A significant increase in PL intensity with a corresponding blue shift in emission energy and a decrease in full width at half maximum (FWHM) has been observed on annealing the GaAsSbN/GaAs sample in a nitrogen ambient at 700°C. PL emission wavelength as long as 1.52 μm at room temperature has been obtained on annealed samples.

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