Electric‐field dependence of interband transitions in In0.53Ga0.47As/In0.52Al0.48As single quantum wells by room‐temperature electrotransmittance
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1997 ◽
Vol 113-114
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pp. 90-96
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1988 ◽
pp. 325-359
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2013 ◽
Vol 15
(9)
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pp. 095016
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