Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

2007 ◽  
Vol 90 (17) ◽  
pp. 171930 ◽  
Author(s):  
Y. Chen ◽  
M. Dudley ◽  
K. X. Liu ◽  
R. E. Stahlbush
Keyword(s):  
Silicon Carbide ◽  
Partial Dislocation ◽  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Dislocation Glide

Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

2007 ◽  
Vol 994 ◽  
Author(s):  
Yi Chen ◽  
Michael Dudley ◽  
Kendrick X Liu ◽  
Robert E Stahlbush
Keyword(s):  
Silicon Carbide ◽  
Partial Dislocation ◽  
Displacement Vector ◽  
Stacking Faults ◽  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Screw Dislocations ◽  
Dislocation Glide ◽  
Shockley Partial ◽  
Partial Dislocations

AbstractElectron-hole recombination enhanced glide of Shockley partial dislocations bounding expanding stacking faults and their interactions with threading dislocations in 4H silicon carbide epitaxial layers have been studied using synchrotron white beam X-ray topography and in situ electroluminescence. The mobile silicon-core Shockley partial dislocations bounding the stacking faults are able to cut through threading edge dislocations leaving no trailing dislocation segments in their wake. However, when the Shockley partial dislocations interact with threading screw dislocations, trailing 30o partial dislocation dipoles are initially deposited in their wake due to the pinning effect of the threading screw dislocations. These dipoles spontaneously snap into their screw orientation, regardless the normally immobile carbon-core Shockley partial dislocation components in the dipoles. They subsequently cross slip and annihilate, leaving a prismatic stacking fault in (2-1-10) plane with the displacement vector 1/3[01-10].

Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

1971 ◽  
Vol 9 ◽  
pp. 158-164 ◽  
Author(s):  
D.K. Wickenden ◽  
K.R. Faulkner ◽  
R.W. Brander ◽  
B.J. Isherwood
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Epitaxial Layers

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

2003 ◽  
Vol 433-436 ◽  
pp. 281-284 ◽  
Author(s):  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
T. Iakimov ◽  
A.O. Okunev ◽  
V.E. Udal'tsov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Defect Formation ◽  
Epitaxial Layers

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

2008 ◽  
Vol 600-603 ◽  
pp. 345-348 ◽  
Author(s):  
Kendrick X. Liu ◽  
X. Zhang ◽  
Robert E. Stahlbush ◽  
Marek Skowronski ◽  
Joshua D. Caldwell
Keyword(s):  
Spectral Characteristics ◽  
Emission Spectra ◽  
Spectral Peak ◽  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Screw Dislocations ◽  
Material Defects ◽  
Partial Dislocations ◽  
Edge Dislocations ◽  
Non Destructive

Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photoluminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

2015 ◽  
Vol 821-823 ◽  
pp. 359-362
Author(s):  
Evgeniy N. Mokhov ◽  
Sergey S. Nagalyuk ◽  
Victor A. Soltamov
Keyword(s):  
Silicon Carbide ◽  
Thick Layer ◽  
Sharp Decrease ◽  
Vapor Transport ◽  
Threading Dislocations ◽  
Extended Defects ◽  
Structural Perfection ◽  
Relief Elements ◽  
Sublimation Method ◽  
Transport Method

— The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport) method has been studied by optical microscopy in combination with chemical etching and AFM. It is established that free lateral growth on protruding relief elements (mesas) is accompanied by a sharp decrease in the density of threading dislocations and micropipes. The decreased density of dislocations is retained after growing a thick layer that involves the overgrowth of grooves that separated individual mesas.

Impurity macroincorporation in silicon carbide epitaxial layers

1977 ◽  
Vol 38 (2) ◽  
pp. 192-196 ◽  
Author(s):  
J. Auleytner ◽  
I. Šwiderski ◽  
W. Zahorowski
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Layers
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