Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy

2011 ◽  
Vol 99 (8) ◽  
pp. 081912 ◽  
Author(s):  
Po Shan Hsu ◽  
Erin C. Young ◽  
Alexey E. Romanov ◽  
Kenji Fujito ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Dislocation Glide ◽  
Dislocation Formation

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Mechanisms and Kinetics of Misfit Dislocation Formation in Heteroepitaxial Thin Films

1990 ◽  
Vol 188 ◽  
Author(s):  
W. D. Nix ◽  
D. B. Noble ◽  
J. F. Turlo
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Motion ◽  
Dislocation Nucleation ◽  
Dislocation Segment ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Film Substrate ◽  
Kinetics Of ◽  
Dislocation Formation

ABSTRACTThe mechanisms and kinetics of forming misfit dislocations in heteroepitaxial films are studied. The critical thickness for misfit dislocation formation can be found by considering the incremental extension of a misfit dislocation by the movement of a “threading” dislocation segment that extends from the film/substrate interface to the free surface of the film. This same mechanism allows one to examine the kinetics of dislocation motion and to illuminate the importance of dislocation nucleation and multiplication in strain relaxation. The effects of unstrained epitaxial capping layers on these processes are also considered. The major effects of such capping layers are to inhibit dislocation nucleation and multiplication. The effect of the capping layer on the velocity of the “threading” dislocation is shown to be small by comparison.A new substrate curvature technique for measuring the strain and studying the kinetics of strain relaxation in heteroepitaxial films is also briefly described.

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy

1998 ◽  
Vol 411 (3) ◽  
pp. L865-L871 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Luis A. Zepeda-Ruiz ◽  
W.Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Interfacial Stability ◽  
Dislocation Formation

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

2000 ◽  
Vol 209 (4) ◽  
pp. 716-723 ◽  
Author(s):  
H. Fukuto ◽  
P. Feichtinger ◽  
G.D. U'Ren ◽  
S. Lindo ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Misfit Dislocation ◽  
Vapor Phase Epitaxy ◽  
Silicon Vapor ◽  
Dislocation Formation

The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates

1993 ◽  
Vol 74 (5) ◽  
pp. 3103-3110 ◽  
Author(s):  
G. Patrick Watson ◽  
Dieter G. Ast ◽  
Timothy J. Anderson ◽  
Balu Pathangey
Keyword(s):  
Misfit Dislocation ◽  
Epitaxial Layers ◽  
Patterned Substrates ◽  
Dislocation Glide

Stabilization of strained multilayers by thin interlayers

1993 ◽  
Vol 8 (7) ◽  
pp. 1572-1577 ◽  
Author(s):  
J.P. Hirth
Keyword(s):  
Shear Stress ◽  
Misfit Dislocation ◽  
Pure Shear ◽  
Lattice Parameters ◽  
Biaxial Stress ◽  
Thin Interlayer ◽  
Dislocation Formation

Strained multilayers composed of two misfitting layers and a third, thin interlayer are considered. With appropriate intermediate lattice parameters for the interlayer, the latter is shown to stabilize the structure with respect to misfit dislocation formation. Cases of misfit corresponding both to balanced biaxial stress and to pure shear stress in the interface are treated.

Misfit dislocation formation in the AlGaN∕GaN heterointerface

2004 ◽  
Vol 96 (12) ◽  
pp. 7087-7094 ◽  
Author(s):  
J. A. Floro ◽  
D. M. Follstaedt ◽  
P. Provencio ◽  
S. J. Hearne ◽  
S. R. Lee
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Formation

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

2012 ◽  
Vol 717-720 ◽  
pp. 313-318 ◽  
Author(s):  
Xuan Zhang ◽  
Tetsuya Miyazawa ◽  
Hidekazu Tsuchida
Keyword(s):  
Temperature Gradient ◽  
Misfit Dislocation ◽  
Annealing Temperature ◽  
Critical Value ◽  
Critical Conditions ◽  
Formation Mechanisms ◽  
Misfit Dislocations ◽  
Interfacial Dislocations ◽  
Annealing Experiments ◽  
Dislocation Formation

Thermal annealing experiments were performed to determine the critical conditions of misfit dislocation formation in 4H-SiC epilayers in a temperature range of 1400-1800 °C. Misfit dislocations were observed to form at a given annealing temperature if the temperature gradient across the epi-wafer exceeded a critical value. It was also found that two types of interfacial dislocations could form under different stress conditions. Their formation mechanisms are discussed.

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